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BYT30PI-1000RG

STMicroelectronics

BYT30PI-1000RG by STMicroelectronics

BYT30PI-1000RG by STMicroelectronics is a fast recovery rectifier diode with a max reverse recovery time of 0.165 µs and can handle up to 30 A output current. It operates b/w -40 °C and 150 °C, making it ideal for high-temperature applications. Its robust design features a flange mount in a rectangular plastic/epoxy package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,615 parts In-Stock

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8,615

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Digiode

USA . 4,347 parts In-Stock

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4,347

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Anansix

USA . 2,311 parts In-Stock

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2,311

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,290 parts In-Stock

1+ parts

$0.137

100+ parts

-

1k+ parts

$0.123

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2,290

$0.137

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$0.123

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MKK Technologies

India . 1,836 parts In-Stock

1+ parts

$0.258

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1,836

$0.258

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DigiPath Technology Company

USA . 1,836 parts In-Stock

1+ parts

$0.258

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1,836

$0.258

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AZTECH Wire

Italy . 154 parts In-Stock

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$13.670

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154

$13.670

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Component Stockers USA

USA . 718 parts In-Stock

1+ parts

$99.990

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718

$99.990

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Corphita

USA . 3,110 parts In-Stock

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3,110

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Parana Technologies

USA . 2,360 parts In-Stock

1+ parts

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$0.164

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2,360

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$0.164

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Native Components

USA . 969 parts In-Stock

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969

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Northwest PG Solutions

USA . 760 parts In-Stock

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760

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Overview

Unlock unparalleled performance with the BYT30PI-1000RG rectifier diode from STMicroelectronics, a leader in semiconductor innovation. This robust component excels in fast recovery applications, ensuring reliable operation even in extreme temperatures. Its durable design means longevity and efficiency, making it ideal for power management in industrial systems and automotive electronics. Trust STMicroelectronics to elevate your designs with quality that delivers lasting value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures lightweight construction and protection against environmental factors, enhancing durability.

Config: SINGLE

A single configuration simplifies the design and integration into various circuits, making it easy to implement.

Maximum Reverse Recovery Time: 0.165 us

Fast reverse recovery time allows for efficient switching, reducing losses and improving overall performance in high-frequency applications.

Maximum Reverse Current: 100 uA

Low reverse current minimizes energy loss and enhances circuit efficiency, making it ideal for power-sensitive applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space usage and mounting in various circuit designs.

No. of Terminals: 2

Having two terminals simplifies connections, making it easier for assembly and integration into electronic devices.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides robust mechanical stability, ensuring reliable operation even under vibration or stress.

Application: FAST RECOVERY

Designed for fast recovery, this diode is well-suited for applications like switching power supplies and motor controls.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance allows the diode to function effectively in harsh environments, increasing versatility.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature expands the range of applications, particularly in cold climates or refrigeration systems.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and corrosion resistance, ensuring reliable long-term connections.

Terminal Position: SINGLE

Single terminal position facilitates straightforward integration into PCB layouts, promoting design simplicity.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference, enhancing safety and reliability in circuit operations.

Maximum Power Dissipation: 60 W

A high power dissipation capability allows the diode to handle significant workloads without overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power conversion applications.

Maximum Forward Voltage (VF): 1.9 V

The maximum forward voltage ensures efficient conduction with minimal losses during operation, enhancing circuit efficiency.

Maximum Output Current: 30 A

High output current handling makes this diode suitable for applications requiring substantial power flow.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical connection and is easy to solder, ensuring reliability in electrical circuits.

Maximum Repetitive Peak Reverse Voltage: 1000 V

High reverse voltage capability allows it to be used in high-voltage applications without risk of breakdown.

Maximum Non-Repetitive Peak Forward Current: 200 A

Capable of handling high surge currents, this diode safeguards circuits against transient spikes, prolonging component life.

Diode Element Material: SILICON

Silicon material ensures excellent conductivity and stability, making it a reliable choice for various electrical applications.

Technical Specifications

Diodes & Rectifiers BYT30PI-1000RG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.9 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

60 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.165 us

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYT30PI-1000RG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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