Loading...

BYT261PIV-1000

STMicroelectronics

BYT261PIV-1000 by STMicroelectronics

BYT261PIV-1000 by STMicroelectronics is a fast recovery rectifier diode with 1000V reverse test voltage, 0.17us reverse recovery time, and 60A output current. It is used in applications requiring high power dissipation and operates b/w -40 to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,119 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,119

-

-

-

-

Digiode

USA . 3,469 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,469

-

-

-

-

Anansix

USA . 1,576 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,576

-

-

-

-

Fibra_Brandt Electronic GMBH

Germany . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 515 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

$0.022

10k+ parts

-

515

$0.025

-

$0.022

-

MKK Technologies

India . 1,021 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

-

10k+ parts

-

1,021

$0.047

-

-

-

DigiPath Technology Company

USA . 1,021 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

-

10k+ parts

-

1,021

$0.047

-

-

-

Component Stockers USA

USA . 4,228 parts In-Stock

1+ parts

$7.570

100+ parts

$7.190

1k+ parts

$6.970

10k+ parts

-

4,228

$7.570

$7.190

$6.970

-

AZTECH Wire

Italy . 52 parts In-Stock

1+ parts

$18.690

100+ parts

-

1k+ parts

-

10k+ parts

-

52

$18.690

-

-

-

Corphita

USA . 3,476 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,476

-

-

-

-

Parana Technologies

USA . 1,923 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

-

10k+ parts

-

1,923

-

$0.030

-

-

Northwest PG Solutions

USA . 954 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

954

-

-

-

-

Native Components

USA . 435 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

435

-

-

-

-

Overview

Unlock the potential of your electronic projects with the high-quality BYT261PIV-1000 diode by STMicroelectronics. Designed with precision and reliability in mind, this fast recovery rectifier diode offers a wide range of applications and benefits for your projects. Whether you're working on power supplies, inverters, or motor control systems, this diode delivers exceptional performance with a maximum output current of 60A and a maximum reverse test voltage of 1000V. Trust STMicroelectronics to provide top-notch components that exceed your expectations and bring your creations to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.17 us

Fast reverse recovery time allows for efficient switching and operation of the diodes.

Maximum Reverse Current: 100 uA

Low reverse current minimizes power loss and enhances overall efficiency of the diodes.

Reverse Test Voltage: 1000 V

High reverse test voltage ensures reliable performance under various operating conditions.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the diodes suitable for different environmental conditions.

Maximum Power Dissipation: 260 W

High power dissipation capability allows the diodes to handle heavy loads without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting AC to DC, making them suitable for various electronic applications.

Technical Specifications

Diodes & Rectifiers BYT261PIV-1000 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

FAST RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.9 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

60 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

260 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.17 us

Reverse Test Voltage:

1000 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

BYT261PIV-1000 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20