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BYT230PIV-1000

STMicroelectronics

BYT230PIV-1000 by STMicroelectronics

BYT230PIV-1000 by STMicroelectronics is a fast recovery rectifier diode with a max reverse voltage of 1000 V and a recovery time of just 0.165 µs. It operates efficiently in temperatures from -40 °C to 150°C, making it ideal for high-power applications. With a max output current of 30 A, it's perfect for demanding circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

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1k+

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Digiode

USA . 4,091 parts In-Stock

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Vyrian

USA . 3,171 parts In-Stock

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Anansix

USA . 1,884 parts In-Stock

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A2Z Electronics, Inc.

USA . 72 parts In-Stock

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Bristol Electronics

USA . 59 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 19 parts In-Stock

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LWI Electronics Inc

India . 15 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 11 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

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IDEA Electronic Components Group

UK . 408 parts In-Stock

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$0.175

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$0.157

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MKK Technologies

India . 2,301 parts In-Stock

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$0.329

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DigiPath Technology Company

USA . 2,301 parts In-Stock

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Component Stockers USA

USA . 206 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

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Corphita

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Northwest PG Solutions

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Native Components

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Metaverse IC Inc.

Canada . 806 parts In-Stock

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Parana Technologies

USA . 219 parts In-Stock

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Assy Fe

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Overview

Elevate your designs with the BYT230PIV-1000 from STMicroelectronics, a leader in semiconductor innovation. This high-performance rectifier diode delivers exceptional fast recovery capabilities, ensuring reliability across demanding applications. With a robust voltage rating of 1000V and superior thermal performance, it’s perfect for power electronics that require efficiency and durability. Trust in STMicroelectronics' legacy of quality to power your projects forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This lightweight yet durable material ensures reliability and holds up under varying environmental conditions, making the product suitable for a range of applications.

Config: SEPARATE, 2 ELEMENTS

The separate element configuration allows for improved circuit design flexibility and optimizes performance in complex systems.

Maximum Reverse Recovery Time: 0.165 us

A low reverse recovery time enhances the efficiency of switching applications, making this diode ideal for fast recovery needs.

Maximum Reverse Current: 100 uA

This low reverse current specification contributes to reduced power loss and increased efficiency in the circuit.

Package Shape: RECTANGULAR

Rectangular package shapes facilitate optimal layout on PCBs, promoting efficient space usage in device design.

Reverse Test Voltage: 1000 V

A high reverse test voltage rating indicates robust performance under high voltage conditions, suitable for applications in harsh environments.

No. of Terminals: 4

Four terminals allow for versatile connection options, enhancing connectivity in various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging provides solid mechanical stability, ensuring reliable mounting in diverse applications.

Application: FAST RECOVERY

Designed for fast recovery applications, this diode excels in circuits requiring rapid switching, enhancing overall circuit performance.

Maximum Operating Temperature: 150 °C

High operating temperature capability ensures reliable performance in demanding environments, ideal for industrial applications.

Minimum Operating Temperature: -40 °C

A wide temperature range ensures functionality in extreme cold conditions, making it suitable for outdoor or cold-storage applications.

Terminal Finish: NICKEL

Nickel terminal finish provides excellent corrosion resistance and promotes longevity of the component in various environments.

Terminal Position: UPPER

Upper terminal positioning optimizes layout and facilitates easier connection during the assembly process.

Case Connection: ISOLATED

Isolated case connection minimizes the risk of short circuits and enhances safety in high-voltage applications.

Maximum Power Dissipation: 120 W

High power dissipation capability allows it to handle significant loads without overheating, making it suitable for high-power applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, essential for various electronic and industrial applications.

Maximum Forward Voltage (VF): 1.9 V

A relatively low forward voltage drop improves efficiency in circuits by reducing power loss during operation.

Maximum Output Current: 30 A

Able to handle high current loads, this diode is ideal for applications requiring significant power delivery.

No. of Elements: 2

The dual-element design allows for improved performance in rectification tasks, enhancing overall efficiency.

Maximum Repetitive Peak Reverse Voltage: 1000 V

A high peak reverse voltage rating ensures dependable performance in environments with fluctuating voltage levels.

Maximum Non Repetitive Peak Forward Current: 200 A

This high non-repetitive forward current rating allows for the handling of surge currents, protecting the circuit during transient events.

Diode Element Material: SILICON

Silicon as a material provides excellent conductivity and thermal stability, making this diode reliable and efficient in various applications.

Technical Specifications

Diodes & Rectifiers BYT230PIV-1000 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.9 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

120 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.165 us

Reverse Test Voltage:

1000 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

BYT230PIV-1000 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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