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BYT230PI-1200

STMicroelectronics

BYT230PI-1200 by STMicroelectronics

BYT230PI-1200 by STMicroelectronics is a fast recovery rectifier diode with 1200V peak reverse voltage and 30A output current. It has a max power dissipation of 120W and 0.165us reverse recovery time, making it suitable for high-power applications requiring quick switching capabilities. The diode's isolated case connection and flange mount package style ensure efficient heat dissipation in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,796 parts In-Stock

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Anansix

USA . 1,129 parts In-Stock

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Digiode

USA . 384 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 652 parts In-Stock

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$0.135

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$0.122

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652

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MKK Technologies

India . 2,348 parts In-Stock

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$0.254

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DigiPath Technology Company

USA . 2,348 parts In-Stock

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$0.254

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Corphita

USA . 4,858 parts In-Stock

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Northwest PG Solutions

USA . 1,354 parts In-Stock

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Native Components

USA . 916 parts In-Stock

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Parana Technologies

USA . 691 parts In-Stock

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$0.162

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Overview

Experience the power of cutting-edge technology with the BYT230PI-1200 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality diodes and rectifiers that are essential for fast recovery applications. With a maximum reverse recovery time of 0.165 us and a maximum forward voltage of 1.9 V, this product offers unmatched performance and reliability. Whether you're working on industrial machinery or electronic devices, the BYT230PI-1200 provides the perfect solution for your needs. Upgrade your projects today and unlock a world of possibilities with STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides protection and durability, making the diode reliable and long-lasting.

Maximum Reverse Recovery Time: 0.165 us

The fast reverse recovery time ensures efficient operation and minimizes power losses in high-speed applications.

Maximum Reverse Current: 100 uA

The low reverse current ensures minimal leakage and enhances the efficiency of the diode.

Maximum Power Dissipation: 120 W

The high power dissipation capability allows the diode to handle high power levels without overheating.

Maximum Forward Voltage (VF): 1.9 V

The low forward voltage drop results in lower power losses and improved efficiency in the circuit.

Maximum Output Current: 30 A

The high output current rating makes this diode suitable for applications requiring high current levels.

Technical Specifications

Diodes & Rectifiers BYT230PI-1200 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

FAST RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.9 V

JESD-30 Code:

R-PUFM-D4

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

120 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.165 us

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYT230PI-1200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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