Loading...

BUZ71CHIP

STMicroelectronics

BUZ71CHIP by STMicroelectronics

STMicroelectronics BUZ71CHIP is a N-CHANNEL FET with 50V DS breakdown voltage and 14A max drain current. Ideal for switching applications, it features a built-in diode, 0.1 ohm RDS(on), and operates in enhancement mode.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,651 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,651

-

-

-

-

Digiode

USA . 1,620 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,620

-

-

-

-

Vyrian

USA . 1,420 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,420

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,466 parts In-Stock

1+ parts

$0.939

100+ parts

-

1k+ parts

$0.845

10k+ parts

-

1,466

$0.939

-

$0.845

-

MKK Technologies

India . 2,308 parts In-Stock

1+ parts

$1.766

100+ parts

-

1k+ parts

-

10k+ parts

-

2,308

$1.766

-

-

-

DigiPath Technology Company

USA . 2,308 parts In-Stock

1+ parts

$1.766

100+ parts

-

1k+ parts

-

10k+ parts

-

2,308

$1.766

-

-

-

Corphita

USA . 4,790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,790

-

-

-

-

Parana Technologies

USA . 963 parts In-Stock

1+ parts

-

100+ parts

$1.123

1k+ parts

-

10k+ parts

-

963

-

$1.123

-

-

Native Components

USA . 199 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

199

-

-

-

-

Northwest PG Solutions

USA . 155 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

155

-

-

-

-

Overview

Elevate your power management solutions with the BUZ71CHIP by STMicroelectronics. As a leader in semiconductor technology, STMicroelectronics delivers unparalleled quality and reliability in their products. The BUZ71CHIP is a game-changer in the Power FET category, offering N-CHANNEL configuration with a built-in diode for seamless switching applications. With a maximum drain current of 14A and a low on-resistance of 0.1 ohm, this product provides exceptional value and performance. Whether you're designing industrial equipment or automotive systems, the BUZ71CHIP is the perfect choice for your power needs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have lower ON-state resistance and higher current-carrying capability compared to P-CHANNEL FETs, making them suitable for high power applications.

Minimum DS Breakdown Voltage: 50 V

With a minimum breakdown voltage of 50V, this FET can handle higher voltage levels without getting damaged, making it suitable for a wide range of applications.

Maximum Drain Current (Abs) (ID): 14 A

With a maximum drain current of 14A, this FET can handle high current loads effectively, making it suitable for power switching applications.

Maximum Drain-Source On Resistance: 0.1 ohm

With a low ON-resistance of 0.1 ohm, this FET minimizes power loss and heat generation, making it efficient for switching applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers high performance and reliability, making this FET a durable and efficient choice for power applications.

Technical Specifications

Power Field Effect Transistors (FET) BUZ71CHIP attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

FAST SWITCHING

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

14 A

Maximum Drain Current (ID):

14 A

Maximum Drain-Source On Resistance:

.1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-XUUC-N2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUZ71CHIP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19