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UMD3N

ROHM

UMD3N by ROHM

NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A; JESD-609 Code: e2; Transistor Element Material: SILICON;

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Kruse Electronics AG

Switzerland . 10,000 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Assy Fe

Spain . 8,249 parts In-Stock

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Kepictronics

USA . 6,249 parts In-Stock

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GreenTree Electronics

Israel . 2,041 parts In-Stock

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMD3N attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

30

JESD-609 Code:

e2

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Transistor Element Material:

SILICON

Trade Compliance

UMD3N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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