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SP8K31HZGTB

ROHM

SP8K31HZGTB by ROHM

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (Abs) (ID): 3.5 A;

Median Price

$1.470

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 4,970 parts In-Stock

1+ parts

$1.050

100+ parts

$0.586

1k+ parts

$0.380

10k+ parts

-

4,970

$1.050

$0.586

$0.380

-

Element14

Singapore . 4,970 parts In-Stock

1+ parts

$1.890

100+ parts

$1.210

1k+ parts

$0.844

10k+ parts

-

4,970

$1.890

$1.210

$0.844

-

Mouser Electronics

USA . 2,421 parts In-Stock

1+ parts

$2.180

100+ parts

$0.934

1k+ parts

$0.683

10k+ parts

$0.624

2,421

$2.180

$0.934

$0.683

$0.624

DigiKey

USA . 2,300 parts In-Stock

1+ parts

$2.180

100+ parts

$0.941

1k+ parts

$0.686

10k+ parts

-

2,300

$2.180

$0.941

$0.686

-

Chip1Stop

Japan . 2,450 parts In-Stock

1+ parts

-

100+ parts

$0.829

1k+ parts

$0.607

10k+ parts

$0.429

2,450

-

$0.829

$0.607

$0.429

Verical

USA . 2,450 parts In-Stock

1+ parts

-

100+ parts

$0.796

1k+ parts

$0.604

10k+ parts

$0.502

2,450

-

$0.796

$0.604

$0.502

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 2,500 parts In-Stock

1+ parts

$1.091

100+ parts

$0.436

1k+ parts

$0.393

10k+ parts

-

2,500

$1.091

$0.436

$0.393

-

Microchip USA

USA . 6,545 parts In-Stock

1+ parts

$4.118

100+ parts

-

1k+ parts

-

10k+ parts

-

6,545

$4.118

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) SP8K31HZGTB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

30 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Maximum Pulsed Drain Current (IDM):

14 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SP8K31HZGTB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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