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RPT-37PB3F-N

ROHM

RPT-37PB3F-N by ROHM

ROHM's RPT-37PB3F-N phototransistor has peak wavelength of 800nm, max temp of 85°C, and collector-emitter breakdown voltage of 32V. Ideal for IR applications with nominal light current of 5.5mA and dark current up to 500nA. Suitable for radial mounting in various optoelectronic devices.

Median Price

$0.890

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,880 parts In-Stock

1+ parts

$0.890

100+ parts

$0.457

1k+ parts

$0.360

10k+ parts

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1,880

$0.890

$0.457

$0.360

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 300 parts In-Stock

1+ parts

$4.068

100+ parts

-

1k+ parts

-

10k+ parts

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300

$4.068

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-

-

Perfect Parts

USA . 358 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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358

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Overview

Discover the innovative RPT-37PB3F-N by ROHM, a premium phototransistor designed to deliver superior performance and reliability. As a leading manufacturer in the industry, ROHM guarantees top-notch quality and cutting-edge technology in all their products. Ideal for a variety of applications, this phototransistor offers unmatched sensitivity and precision in detecting light, making it perfect for use in sensors, detectors, and control systems. Experience the value and benefits of the RPT-37PB3F-N, where quality meets efficiency for your next project.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy installation and operation, making it user-friendly.

Peak Wavelength (nm): 800

The peak wavelength of 800nm ensures optimal performance for specific applications requiring this range of light sensitivity.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, this product provides high sensitivity to light, making it suitable for light detection and control applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product can withstand higher temperature environments without affecting its performance.

Shape: ROUND

The round shape allows for easy integration and mounting in various devices or systems.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25°C ensures reliable operation even in cold conditions.

Maximum Power Dissipation: 0.15 W

The maximum power dissipation of 0.15W indicates efficient power handling capacity of the phototransistor.

Nominal Light Current: 5.5 mA

The high nominal light current of 5.5 mA indicates strong light detection capability of this phototransistor.

Maximum Dark Current: 500 nA

The low maximum dark current of 500 nA ensures minimal current flow in the absence of light, reducing power consumption.

Infrared (IR) Range: YES

The presence of an infrared range makes this phototransistor suitable for applications requiring IR light detection.

Minimum Collector-emitter Breakdown Voltage: 32 V

The high collector-emitter breakdown voltage of 32V indicates reliable performance and protection against voltage spikes.

Mounting Feature: RADIAL MOUNT

The radial mount feature allows for easy and secure mounting of the phototransistor in various devices or systems.

Maximum On State Current: 0.03 A

The maximum on-state current of 0.03A indicates the capability of handling high currents for specific applications.

Technical Specifications

Phototransistors RPT-37PB3F-N attributes and parameters. Explore more Phototransistors devices from ROHM

Specs

Minimum Collector-emitter Breakdown Voltage:

32 V

Configuration:

SINGLE

Maximum Dark Current:

500 nA

Infrared (IR) Range:

YES

Nominal Light Current:

5.5 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.03 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

800

Maximum Power Dissipation:

.15 W

Shape:

ROUND

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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