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RD3L220SNTL1

ROHM

RD3L220SNTL1 by ROHM

ROHM RD3L220SNTL1 is a N-CHANNEL FET with 60V DS breakdown voltage and 44A IDM. Ideal for switching applications, it features 0.033 ohm max RDS(on) and SILICON transistor element material. The small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$1.140

Lifecycle Status

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9

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1k+

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Newark

USA . 2,492 parts In-Stock

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$1.140

100+ parts

$0.745

1k+ parts

$0.658

10k+ parts

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2,492

$1.140

$0.745

$0.658

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DigiKey

USA . 8,063 parts In-Stock

1+ parts

$2.430

100+ parts

$1.065

1k+ parts

$0.785

10k+ parts

$0.595

8,063

$2.430

$1.065

$0.785

$0.595

Mouser Electronics

USA . 1,010 parts In-Stock

1+ parts

$2.450

100+ parts

$1.070

1k+ parts

$0.786

10k+ parts

$0.736

1,010

$2.450

$1.070

$0.786

$0.736

Element14

Singapore . 2,683 parts In-Stock

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$3.350

100+ parts

$1.470

1k+ parts

$1.070

10k+ parts

$1.060

2,683

$3.350

$1.470

$1.070

$1.060

Verical

USA . 15,965 parts In-Stock

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-

100+ parts

$1.109

1k+ parts

$0.992

10k+ parts

$0.914

15,965

-

$1.109

$0.992

$0.914

Farnell

UK . 2,683 parts In-Stock

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-

100+ parts

$0.869

1k+ parts

$0.665

10k+ parts

$0.630

2,683

-

$0.869

$0.665

$0.630

Chip1Stop

Japan . 94 parts In-Stock

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-

100+ parts

$0.594

1k+ parts

$0.526

10k+ parts

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94

-

$0.594

$0.526

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ACDS - Activité Composants Distribution Service

France . 19,840 parts In-Stock

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19,840

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Chip Stock

USA . 6,500 parts In-Stock

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6,500

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CoreStaff

Japan . 15,613 parts In-Stock

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$1.364

100+ parts

$0.564

1k+ parts

$0.516

10k+ parts

-

15,613

$1.364

$0.564

$0.516

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Microchip USA

USA . 3,317 parts In-Stock

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$5.343

100+ parts

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3,317

$5.343

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QUARKTWIN TECHNOLOGY LTD

USA . 21,806 parts In-Stock

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21,806

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Overview

Discover the RD3L220SNTL1 by ROHM, a top-quality Power Field Effect Transistor that promises unparalleled performance and reliability. Manufactured by ROHM, a trusted name in the industry, this N-CHANNEL FET is perfect for various switching applications. With a maximum drain current of 22A and a low on-resistance, this transistor ensures efficient operation. The RD3L220SNTL1 comes in a convenient small outline package with gull wing terminals for easy installation. Upgrade your electronics with this enhancement mode transistor and experience the difference in power and efficiency it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics and higher efficiency compared to P-channel transistors, making them a popular choice for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse voltage spikes, enhancing the overall reliability of the circuit.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is optimized for fast switching speeds and efficient operation in various electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying manufacturing processes.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections, ensuring proper functionality and stability in various operating conditions.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easily controlled and offer high performance in switching applications, providing efficient operation and improved overall circuit performance.

Maximum Pulsed Drain Current (IDM): 44 A

With a high maximum pulsed drain current of 44A, this transistor can handle peak current demands in transient conditions, ensuring reliable operation under heavy loads.

No. of Terminals: 2

With 2 terminals, this transistor is simple to integrate into circuit designs and offers straightforward connections for added convenience.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs and enables compact designs, making it ideal for applications where size and form factor are crucial.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides efficient performance, low power consumption, and reliable operation, making it a preferred choice for many electronic applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low leakage, and reliable operation, making them suitable for a wide range of applications in various industries.

Maximum Drain Current (ID): 22 A

With a maximum drain current of 22A, this transistor can handle high current loads, ensuring stable operation and reliability in demanding applications.

Maximum Drain-Source On Resistance: 0.033 ohm

The low drain-source on resistance of 0.033 ohm minimizes power losses and heat dissipation, improving efficiency and overall performance of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies connectivity and ensures proper orientation during installation, reducing the risk of errors and enhancing overall ease of use.

Case Connection: DRAIN

Case connection at drain terminal simplifies circuit design and enhances stability by providing a common connection point for efficient current flow.

Technical Specifications

Power Field Effect Transistors (FET) RD3L220SNTL1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

22 A

Maximum Drain-Source On Resistance:

.033 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

44 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RD3L220SNTL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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