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RD3L080SNTL1

ROHM

RD3L080SNTL1 by ROHM

ROHM's RD3L080SNTL1 is a N-CHANNEL FET with 60V DS breakdown voltage and 16A IDM. Ideal for switching applications, it features 0.109 ohm RDS(on) and a built-in diode in a small outline package.

Median Price

$0.792

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Newark

USA . 2,484 parts In-Stock

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$0.728

100+ parts

$0.477

1k+ parts

$0.333

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2,484

$0.728

$0.477

$0.333

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Farnell

UK . 2,484 parts In-Stock

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$0.857

100+ parts

$0.494

1k+ parts

$0.306

10k+ parts

$0.299

2,484

$0.857

$0.494

$0.306

$0.299

Element14

Singapore . 2,484 parts In-Stock

1+ parts

$1.330

100+ parts

$0.870

1k+ parts

$0.608

10k+ parts

-

2,484

$1.330

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$0.608

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DigiKey

USA . 4,489 parts In-Stock

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$1.640

100+ parts

$0.694

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$0.499

10k+ parts

$0.399

4,489

$1.640

$0.694

$0.499

$0.399

Mouser Electronics

USA . 1,440 parts In-Stock

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$1.750

100+ parts

$0.743

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$0.534

10k+ parts

$0.462

1,440

$1.750

$0.743

$0.534

$0.462

Verical

USA . 5,000 parts In-Stock

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$0.549

10k+ parts

$0.519

5,000

-

-

$0.549

$0.519

RS (Exports)

UK . 2,410 parts In-Stock

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$0.601

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$0.453

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2,410

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$0.601

$0.453

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Chip1Stop

Japan . 95 parts In-Stock

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$0.712

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95

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ACDS - Activité Composants Distribution Service

France . 571 parts In-Stock

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571

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Component Stockers USA

USA . 4,816 parts In-Stock

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$0.760

100+ parts

$0.350

1k+ parts

$0.310

10k+ parts

$0.310

4,816

$0.760

$0.350

$0.310

$0.310

CoreStaff

Japan . 5,000 parts In-Stock

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$0.784

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$0.357

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$0.321

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5,000

$0.784

$0.357

$0.321

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USA . 3,000 parts In-Stock

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Futuretech Components

Singapore . 400 parts In-Stock

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400

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Overview

Experience the power and efficiency of the RD3L080SNTL1 by ROHM, a top-quality Power Field Effect Transistor perfect for switching applications. With its N-CHANNEL polarity and built-in diode, this transistor offers enhanced performance and reliability. From its impressive 60V minimum DS breakdown voltage to its 16A maximum pulsed drain current, this transistor is designed to meet all your power needs. Trust in ROHM's reputation for excellence and innovation, and unlock the full potential of your electronic devices with the RD3L080SNTL1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high efficiency and fast switching speeds, making this transistor ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps protect the transistor from voltage spikes and reverse currents, ensuring reliable performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle high-speed switching and provide efficient power management.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation onto circuit boards, making it ideal for compact designs and mass production.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle moderate to high voltage levels, enhancing its versatility in various applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit layouts and provides a standardized form factor for compatibility with existing designs.

Terminal Form: GULL WING

The gull wing terminal form ensures secure connections to the circuit board, reducing the risk of detachment or disconnection during operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control over the transistor's switching behavior, making it suitable for a wide range of switching applications.

Maximum Pulsed Drain Current (IDM): 16 A

The high pulsed drain current rating of 16A enables the transistor to handle short-term power surges and peak currents without compromising performance.

No. of Terminals: 2

With only 2 terminals, this transistor is easy to install and provides a simple and straightforward interface for connecting to the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers space-saving benefits and is well-suited for compact electronic devices and applications with limited board space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high efficiency and low power consumption, making this transistor energy-efficient and reliable for extended use.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, ensuring long-term stability and consistent operation in a wide range of conditions.

Maximum Drain Current (ID): 8 A

The maximum drain current rating of 8A allows the transistor to handle continuous power loads and ensures reliable performance under normal operating conditions.

Maximum Drain-Source On Resistance: 0.109 ohm

With a low drain-source on resistance of 0.109 ohm, this transistor minimizes power losses and heat generation, improving overall efficiency and performance.

Terminal Position: SINGLE

A single terminal position simplifies installation and connections, reducing the risk of misalignment or incorrect wiring during assembly.

Case Connection: DRAIN

The drain case connection allows for efficient heat dissipation and helps maintain the transistor's temperature within safe operating limits, enhancing long-term reliability.

Technical Specifications

Power Field Effect Transistors (FET) RD3L080SNTL1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.109 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

16 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RD3L080SNTL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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