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RD3L080SNFRATL

ROHM

RD3L080SNFRATL by ROHM

ROHM's RD3L080SNFRATL is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 16A IDM, 0.109 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and AEC-Q101 standard, it suits automotive electronics requiring high current handling.

Median Price

$1.590

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,374 parts In-Stock

1+ parts

$1.590

100+ parts

$0.868

1k+ parts

$0.662

10k+ parts

$0.541

6,374

$1.590

$0.868

$0.662

$0.541

Mouser Electronics

USA . 2,789 parts In-Stock

1+ parts

$1.590

100+ parts

$0.868

1k+ parts

$0.651

10k+ parts

$0.541

2,789

$1.590

$0.868

$0.651

$0.541

Newark

USA . 2,388 parts In-Stock

1+ parts

$1.600

100+ parts

$0.893

1k+ parts

$0.679

10k+ parts

-

2,388

$1.600

$0.893

$0.679

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Element14

Singapore . 2,403 parts In-Stock

1+ parts

$105.680

100+ parts

$67.510

1k+ parts

$48.240

10k+ parts

-

2,403

$105.680

$67.510

$48.240

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Farnell

UK . 2,403 parts In-Stock

1+ parts

-

100+ parts

$0.576

1k+ parts

$0.381

10k+ parts

$0.363

2,403

-

$0.576

$0.381

$0.363

Chip1Stop

Japan . 1,985 parts In-Stock

1+ parts

-

100+ parts

$0.799

1k+ parts

$0.608

10k+ parts

$0.431

1,985

-

$0.799

$0.608

$0.431

Verical

USA . 1,985 parts In-Stock

1+ parts

-

100+ parts

$1.090

1k+ parts

$0.757

10k+ parts

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1,985

-

$1.090

$0.757

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ACDS - Activité Composants Distribution Service

France . 2,260 parts In-Stock

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2,260

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Distributors (Availability)

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CoreStaff

Japan . 2,244 parts In-Stock

1+ parts

$3.109

100+ parts

$0.499

1k+ parts

$0.447

10k+ parts

-

2,244

$3.109

$0.499

$0.447

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Microchip USA

USA . 8,390 parts In-Stock

1+ parts

$4.137

100+ parts

-

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8,390

$4.137

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Overview

Experience unmatched power and efficiency with the RD3L080SNFRATL by ROHM. As a leading manufacturer in the industry, ROHM ensures top-notch quality in every product. This N-CHANNEL Power Field Effect Transistor (FET) is designed for switching applications, offering a breakthrough in performance and reliability. With a maximum pulsed drain current of 16A and a minimum DS breakdown voltage of 60V, this transistor guarantees optimal functionality. Say hello to enhanced performance and seamless operation with the RD3L080SNFRATL by ROHM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good thermal and electrical insulation properties, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility and conductivity, leading to better performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and protects against reverse voltage spikes, making it convenient for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, which ensures efficient performance and reliable operation.

Surface Mount: YES

Surface mount technology allows for compact and space-saving designs, ideal for modern electronic devices.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage ensures safe operation in high voltage applications, offering protection against voltage spikes.

Package Shape: RECTANGULAR

Rectangular shape provides easy and secure mounting on circuit boards, ensuring stability and ease of integration.

Terminal Form: GULL WING

Gull wing terminals allow for easy soldering and secure mechanical connections, enhancing reliability in operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer fast switching speeds and low resistance, ensuring efficient performance in various applications.

Maximum Pulsed Drain Current (IDM): 16 A

High pulsed drain current capability enables the FET to handle sudden current surges, making it suitable for demanding applications.

No. of Terminals: 2

Having two terminals simplifies circuit connections and offers straightforward integration in electronic designs.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact designs, suitable for portable electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high switching speeds and low power consumption, ensuring efficient operation.

Transistor Element Material: SILICON

Silicon material offers high reliability and temperature stability, ensuring long-term performance in various operating conditions.

Maximum Drain Current (ID): 8 A

High drain current rating allows the FET to handle high current loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.109 ohm

Low on-resistance results in minimal power dissipation and heat generation, improving efficiency in power switching applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and allows for easy integration into electronic systems.

Case Connection: DRAIN

Having drain as the case connection simplifies circuit design and offers easy connectivity in various applications.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability, quality, and durability, making the product suitable for automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) RD3L080SNFRATL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.109 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

16 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RD3L080SNFRATL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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