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R6035VNXC7G

ROHM

R6035VNXC7G by ROHM

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 81 W; Case Connection: ISOLATED; Maximum Drain-Source On Resistance: .119 ohm;

Median Price

$2.620

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Farnell

UK . 90 parts In-Stock

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$1.830

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90

$1.830

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Chip1Stop

Japan . 800 parts In-Stock

1+ parts

$2.400

100+ parts

$1.170

1k+ parts

$1.160

10k+ parts

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800

$2.400

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$1.160

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Mouser Electronics

USA . 2,039 parts In-Stock

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$2.620

100+ parts

$2.550

1k+ parts

$2.540

10k+ parts

-

2,039

$2.620

$2.550

$2.540

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DigiKey

USA . 746 parts In-Stock

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$2.620

100+ parts

$1.239

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746

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Newark

USA . 85 parts In-Stock

1+ parts

$4.620

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85

$4.620

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Element14

Singapore . 90 parts In-Stock

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$8.010

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$5.120

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$4.130

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90

$8.010

$5.120

$4.130

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Verical

USA . 800 parts In-Stock

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-

100+ parts

$1.525

1k+ parts

$1.512

10k+ parts

-

800

-

$1.525

$1.512

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Distributors (In-Stock)

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ACDS - Activité Composants Distribution Service

France . 80 parts In-Stock

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80

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CoreStaff

Japan . 80 parts In-Stock

1+ parts

$3.966

100+ parts

$1.526

1k+ parts

$1.487

10k+ parts

-

80

$3.966

$1.526

$1.487

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Microchip USA

USA . 6,576 parts In-Stock

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$16.296

100+ parts

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6,576

$16.296

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Technical Specifications

Power Field Effect Transistors (FET) R6035VNXC7G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

148 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

17 A

Maximum Drain-Source On Resistance:

.119 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

105 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

R6035VNXC7G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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