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2SAR564F3TR

ROHM

2SAR564F3TR by ROHM

ROHM 2SAR564F3TR is a PNP BJT transistor with max VCEsat of 0.36V, hFE of 120, and IC of 4A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 220MHz. Operating temp up to 150°C makes it suitable for various electronic designs.

Median Price

$0.540

Lifecycle Status

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8

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1k+

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Element14

Singapore . 2,958 parts In-Stock

1+ parts

$0.848

100+ parts

$0.543

1k+ parts

$0.375

10k+ parts

$0.375

2,958

$0.848

$0.543

$0.375

$0.375

Mouser Electronics

USA . 2,130 parts In-Stock

1+ parts

$0.880

100+ parts

$0.560

1k+ parts

$0.387

10k+ parts

$0.330

2,130

$0.880

$0.560

$0.387

$0.330

Newark

USA . 2,958 parts In-Stock

1+ parts

$1.280

100+ parts

$0.569

1k+ parts

$0.421

10k+ parts

-

2,958

$1.280

$0.569

$0.421

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DigiKey

USA . 3,000 parts In-Stock

1+ parts

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$0.330

3,000

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$0.330

Verical

USA . 2,985 parts In-Stock

1+ parts

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100+ parts

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$0.539

10k+ parts

$0.523

2,985

-

-

$0.539

$0.523

Farnell

UK . 2,958 parts In-Stock

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-

100+ parts

$0.410

1k+ parts

$0.293

10k+ parts

-

2,958

-

$0.410

$0.293

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Chip1Stop

Japan . 145 parts In-Stock

1+ parts

-

100+ parts

$0.540

1k+ parts

$0.387

10k+ parts

-

145

-

$0.540

$0.387

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Distributors (In-Stock)

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ACDS - Activité Composants Distribution Service

France . 2,985 parts In-Stock

1+ parts

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2,985

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Distributors (Availability)

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CoreStaff

Japan . 2,985 parts In-Stock

1+ parts

$0.738

100+ parts

$0.295

1k+ parts

$0.266

10k+ parts

-

2,985

$0.738

$0.295

$0.266

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QUARKTWIN TECHNOLOGY LTD

USA . 23,667 parts In-Stock

1+ parts

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23,667

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Overview

Unleash the power of innovation with the 2SAR564F3TR by ROHM, a high-quality Small Signal Bipolar Junction Transistor designed to amplify signals with precision. Manufactured by ROHM, a trusted name in the industry known for excellence, this PNP transistor is perfect for applications such as amplifiers. Its compact design and efficient performance make it a valuable asset for any project, offering customers exceptional value, reliability, and superior results. Upgrade your electronics today with the 2SAR564F3TR and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the transistor a reliable choice for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy compatibility with other PNP transistors and circuits, enhancing flexibility in design.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum VCEsat: 0.36 V

Low VCEsat value indicates minimal saturation voltage, resulting in efficient switching and reduced power loss.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and improving overall circuit layout.

Maximum Power Dissipation (Abs): 1 W

With a high power dissipation rating, the transistor can handle higher power loads without overheating, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 120

A high DC current gain value ensures consistent and stable amplification of signals, making it suitable for various amplifier applications.

Maximum Collector-Base Capacitance: 50 pF

Low collector-base capacitance helps in reducing the potential for parasitic capacitance effects, leading to improved high-frequency performance.

Maximum Collector-Emitter Voltage: 80 V

With a high collector-emitter voltage rating, this transistor can withstand high voltage levels without breakdown, making it suitable for high-voltage applications.

Maximum Collector Current (IC): 4 A

High collector current rating allows the transistor to handle larger current loads, making it suitable for applications requiring high current operation.

Nominal Transition Frequency (fT): 220 MHz

High transition frequency enables the transistor to operate at high frequencies, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SAR564F3TR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Base Capacitance:

50 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

S-PDSO-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.36 V

Trade Compliance

2SAR564F3TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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