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RMWV6416AGBG-5S2

Renesas Electronics

RMWV6416AGBG-5S2 by Renesas Electronics

Renesas Electronics RMWV6416AGBG-5S2 is a 4MX16 SRAM with 55ns access time, operating at 3V. It has a memory density of 67108864 bits and operates in industrial temperature range (-40 to 85°C). Suitable for applications requiring fast synchronous parallel memory access.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,500 parts In-Stock

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1,500

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Nova Conductors

Japan . 68 parts In-Stock

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68

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AZTECH Wire

Italy . 614 parts In-Stock

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$5.588

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Ampacity Inc.

Singapore . 678 parts In-Stock

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$11.000

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Continental Prestige Electronics

USA . 3,884 parts In-Stock

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Argo Parts USA

USA . 411 parts In-Stock

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411

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality RMWV6416AGBG-5S2 SRAM by Renesas Electronics. Renowned for their reliability and innovation, Renesas Electronics offers cutting-edge solutions for various applications. This synchronous SRAM operates at a nominal voltage of 3V and is designed for industrial temperature grades, making it ideal for demanding environments. With a memory density of 67108864 bits and a maximum access time of 55ns, this product provides fast and efficient performance. Trust Renesas Electronics to deliver top-notch technology that enhances the functionality of your products. Choose the RMWV6416AGBG-5S2 for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good protection for the internal components of the product, making it durable and long-lasting.

Surface Mount: YES

Surface mount technology allows for easy installation on circuit boards, making the product easy to integrate into electronic systems.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise data transfer and timing, improving overall performance of the product.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes the product energy-efficient and suitable for various low-power applications.

No. of Terminals: 48

Having 48 terminals provides sufficient connectivity options and flexibility in the product's design and use.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall reliability and efficiency of the product.

Memory Density: 67108864 bit

High memory density allows for storing a large amount of data in a compact form factor, making the product suitable for applications that require ample memory storage.

Maximum Access Time: 55 ns

Fast access time of 55 nanoseconds ensures quick data retrieval and processing, making the product suitable for high-performance applications.

Technical Specifications

SRAM RMWV6416AGBG-5S2 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

55 ns

Alternate Memory Width:

8

JESD-30 Code:

R-PBGA-B48

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Position:

BOTTOM

Trade Compliance

RMWV6416AGBG-5S2 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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