Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; JESD-609 Code: e6; Shape: ROUND; Peak Wavelength (nm): 1550;
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Laser Diodes NX6504SK-A attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics
Configuration:
JESD-609 Code:
No. of Functions:
Optoelectronic Type:
Nominal Output Power:
Peak Wavelength (nm):
Shape:
Size:
Terminal Finish:
Maximum Threshold Current:
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Micro Commercial Components
Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;
EPCS4SI8N
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
CGA3E2X7R1H104K080AA
TDK
CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.
M24308/2-1F
Souriau-sunbank Connection Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body Length: 1.228 inch; Mounting Type: CABLE AND PANEL; Termination Type: CRIMP;
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
BAV99
Bkc Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
ULN-2803A
Vishay Sprague
Vishay Sprague's ULN-2803A is an 8-bit peripheral driver with a max supply voltage of 3V. Featuring open-collector output characteristics, it offers built-in transient protections and operates b/w -20°C to 85°C. Ideal for applications requiring sink current flow direction, this rectangular-shaped driver has a terminal pitch of 2.54mm and turn-on/off time of 1us.
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
Vishay Telefunken
FDN5618P
Onsemi
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
SN6505BDBVR
Texas Instruments
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Weitron Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;
BSS84PH6327XTSA2
Infineon Technologies
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;
NX8567SAM366-CC
Renesas Electronics
LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1536; Maximum Forward Current: .15 A;
NX8562LF549-BA-AZ
LASER DIODE; Peak Wavelength (nm): 1555; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Semiconductor Material: GaAs; Maximum Operating Temperature: 70 Cel;
DL-3147-031
DL-3147-031 by Onsemi is a Laser Diode with 0.05A max forward current, peak wavelength of 650nm, and max operating temp of 50 °C. Ideal for applications requiring through hole mounting such as laser modules, medical equipment, and industrial sensors.
SFH487401
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 2 m; Shape: ROUND; Nominal Output Power: 1000 W;
DL-3148-025
DL-3148-025 by Onsemi is a LASER DIODE with peak wavelength of 635nm. It has max forward current of 0.045A and voltage of 2.4V, suitable for THROUGH HOLE MOUNT applications. Operating temp range from -10 °C to 40°C makes it ideal for various optoelectronic projects.
DL3038-051
DL3038-051 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
TOLD9421(S)
Toshiba
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaAlInP; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 650;
DL3148-011
DL3148-011 by Onsemi is a LASER DIODE with 0.055A max forward current, 635nm peak wavelength, and -10 to 40 °C operating temp range. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.
NX8564LE461-BC
LASER DIODE; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1546; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -20 Cel;
TOLD323BCA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1310;
SDL3140-001
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel;
TOED313
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000035 s; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V;
OPV300
Tt Electronics Plc
OPV300 by Tt Electronics Plc is a SINGLE LASER DIODE with 2.54mm size, emitting at 850nm peak wavelength. It operates b/w 0-70°C, with max forward current of 0.012A and nominal output power of 1.1W. Ideal for applications requiring precise optical alignment and high-power laser emission in compact spaces.
CQF25A/D14
NXP Semiconductors
CQF25A/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
TOLD322ACB
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
NX8570SC315-BA
LASER DIODE; Peak Wavelength (nm): 1531; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A;
NX8560SJ385-CC
LASER DIODE; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Maximum Response Time: .00000000004 s; Semiconductor Material: GaAs; Maximum Operating Temperature: 70 Cel;
SDL3140-111
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;
NX8563LAS509-CD-A
LASER DIODE; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .3 A; Maximum Response Time: .00000000012 s;
TOLD321AAB
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: InGaAs; Minimum Operating Temperature: 0 Cel; Maximum Response Time: .000000001 s;
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NX6508GH55-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.6 V; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1550;
NX6504SK
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1550; Semiconductor Material: InGaAsP;
NX6504GK
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .01 A; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550; Semiconductor Material: InGaAsP;
NX6508GH51-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000001 s; Peak Wavelength (nm): 1510; Maximum Forward Current: .15 A; Maximum Operating Temperature: 85 Cel;
NX6506GH-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Response Time: .0000000001 s; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 85 Cel;
NX6504SI-A
LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); JESD-609 Code: e6; Nominal Output Power: 10 W; Maximum Threshold Current: 25 mA; Peak Wavelength (nm): 1550;
NX6508GH57-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1570; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .0000000001 s; Maximum Forward Current: .15 A;
NX6504GH-A
LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); Peak Wavelength (nm): 1550; Nominal Output Power: 5 W; JESD-609 Code: e6; No. of Functions: 1;
NX6504GK-A
LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); Peak Wavelength (nm): 1550; Nominal Output Power: 5 W; Shape: ROUND; JESD-609 Code: e6;
NX6508GH49-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.6 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel;
NX6506GK-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.6 V; Peak Wavelength (nm): 1550; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 85 Cel;
NX6504SH-A
LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); Peak Wavelength (nm): 1550; Size: 1.6 mm; JESD-609 Code: e6; Shape: ROUND;
NX6508GH53-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1530; Maximum Forward Voltage: 1.6 V;
NX6504GJ-A
LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); No. of Functions: 1; Peak Wavelength (nm): 1550; Maximum Threshold Current: 25 mA; Shape: ROUND;
NX6504SJ-A
LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); Maximum Threshold Current: 25 mA; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; JESD-609 Code: e6; Nominal Output Power: 10 W;
NX6504GH
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 85 Cel; Maximum Forward Current: .01 A;
NX6504GI-A
LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); Nominal Output Power: 10 W; No. of Functions: 1; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Threshold Current: 25 mA;
NX6504SH
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .01 A; Semiconductor Material: InGaAsP;
NX6508GH47-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .0000000001 s;
Nec Compound Semiconductor Devices
LASER DIODE; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 1550; Maximum Threshold Current: 25 mA; Shape: ROUND; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;
Supply Digital Components
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