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2SJ530(L)-(2)

Renesas Electronics

2SJ530(L)-(2) by Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 15 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,146 parts In-Stock

1+ parts

$3.067

100+ parts

-

1k+ parts

-

10k+ parts

-

1,146

$3.067

-

-

-

Native Components

USA . 556 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.704

10k+ parts

-

556

-

-

$2.704

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Technical Specifications

Other Function Transistors 2SJ530(L)-(2) attributes and parameters. Explore more Other Function Transistors devices from Renesas Electronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

15 A

Maximum Drain Current (ID):

15 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SJ530(L)-(2) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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