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2SJ596TP-FA

Onsemi

2SJ596TP-FA by Onsemi

The Onsemi 2SJ596TP-FA is a P-CHANNEL transistor with a max drain current of 8A and power dissipation of 20W. It operates in enhancement mode, suitable for applications requiring high power handling such as power supplies or motor control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,333 parts In-Stock

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1,333

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Digiode

USA . 78 parts In-Stock

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78

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Distributors (Availability)

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Native Components

USA . 431 parts In-Stock

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$0.148

100+ parts

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$0.142

431

$0.148

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$0.142

Northwest PG Solutions

USA . 2,357 parts In-Stock

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$0.163

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$0.143

2,357

$0.163

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$0.143

Kulean Microsystems

USA . 8,159 parts In-Stock

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8,159

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Problanco Electronics

Mexico . 5,608 parts In-Stock

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5,608

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SupplyDigital Components

Austria . 4,340 parts In-Stock

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4,340

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TANS Electronics

Latvia . 3,939 parts In-Stock

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3,939

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UHIMA Technologies

Türkiye . 669 parts In-Stock

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669

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Corohmni

South Africa . 399 parts In-Stock

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399

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Corphita

USA . 160 parts In-Stock

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160

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Overview

Unleash the power of innovation with the 2SJ596TP-FA by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their products. The 2SJ596TP-FA falls into the category of Other Function Transistors, offering P-CHANNEL polarity with SINGLE configuration. Ideal for various applications, this enhancement mode transistor boasts a maximum drain current of 8A and a maximum power dissipation of 20W. Trust Onsemi to provide cutting-edge technology with the 2SJ596TP-FA, ensuring optimal performance and efficiency for all your electronic needs.

Feature Benefit Bullets

Polarity/Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their high switching speed and efficiency, making them ideal for applications that require fast response times and low power consumption.

Configuration: SINGLE

SINGLE configuration transistors are easy to work with and offer straightforward circuit design, making them a good choice for basic electronic projects or applications.

Surface Mount: YES

Surface mount transistors are compact and space-saving, perfect for PCB designs with limited room. They also offer improved thermal performance compared to through-hole components.

Operating Mode: ENHANCEMENT MODE

ENHANCEMENT MODE transistors require only a small input signal to control a much larger output signal, offering high gain and precise control in various applications.

Maximum Drain Current (ID): 8 A

With a maximum drain current of 8 A, this transistor can handle high-current applications without overheating or failure, ensuring reliable performance even in demanding conditions.

Maximum Power Dissipation: 20 W

The high maximum power dissipation of 20 W allows this transistor to handle high-power applications without risk of damage or failure, making it suitable for various industrial and commercial uses.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor transistors are known for their high input impedance, low noise, and stable performance, making them a popular choice for amplifiers, sensors, and other precision applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures without performance degradation, ensuring reliable operation in harsh environments or high-temperature applications.

Technical Specifications

Other Function Transistors 2SJ596TP-FA attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ596TP-FA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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