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2SJ594TP-FA

Onsemi

2SJ594TP-FA by Onsemi

The Onsemi 2SJ594TP-FA is a P-CHANNEL MOSFET with 5A max drain current and 15W max power dissipation. Ideal for enhancement mode applications, it operates at up to 150 °C. Suitable for surface mount configurations in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,120 parts In-Stock

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Vyrian

USA . 1,957 parts In-Stock

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SupplyDigital Components

Austria . 6,171 parts In-Stock

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Kulean Microsystems

USA . 5,677 parts In-Stock

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TANS Electronics

Latvia . 5,269 parts In-Stock

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Problanco Electronics

Mexico . 4,412 parts In-Stock

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Northwest PG Solutions

USA . 2,374 parts In-Stock

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Corphita

USA . 1,990 parts In-Stock

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Native Components

USA . 881 parts In-Stock

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UHIMA Technologies

Türkiye . 729 parts In-Stock

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Corohmni

South Africa . 71 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the 2SJ594TP-FA by Onsemi, a leading manufacturer in the industry. This P-CHANNEL transistor offers enhanced performance and efficiency for a variety of applications. With a maximum drain current of 5A and maximum power dissipation of 15W, this transistor is sure to meet your power needs. Whether you're looking to optimize your circuit design or increase overall system efficiency, the 2SJ594TP-FA provides superior value and benefits that will exceed your expectations. Experience the difference with Onsemi's innovative technology.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for low ON-resistance and high input/output impedance, making them suitable for low power applications.

Configuration: SINGLE

Single configuration transistors are simpler to use and design with, making them a good choice for basic electronic circuits.

Surface Mount: YES

Surface mount transistors are compact and easy to integrate into PCBs, saving space and allowing for high-density circuit designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally OFF devices, providing better control over the output signal and lower power consumption.

Maximum Drain Current (Abs) (ID): 5 A

With a high maximum drain current, this transistor can handle higher power loads, making it suitable for various applications.

Maximum Power Dissipation (Abs): 15 W

The high maximum power dissipation rating allows the transistor to handle higher power levels without overheating, ensuring reliability and longevity.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and efficiency in a compact package, making this transistor suitable for modern electronic devices.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the transistor can withstand harsh environments and high temperature conditions, increasing its reliability.

Technical Specifications

Other Function Transistors 2SJ594TP-FA attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ594TP-FA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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