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2N7002KV

Rectron

2N7002KV by Rectron

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 2 ohm; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N7002KV attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Rectron

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N7002KV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Rectron

Rectron Limited was established in January 1976 in Tu-Cheng, Taipei by a team of experienced semiconductor engineers. Financed locally, Rectron very quickly emerged as a recognized supplier of quality discrete semi-conductors. In 1981, Rectron increased sales revenues with direct access to the global semiconductor market via a network of exclusive Distributors and Agents. Rectron received approval for initial Public Offering of common stock in January 1985 and has opened wholly owned subsidiaries in Los Angeles, USA; London, England; and Hong Kong. Further expansion came in early 1994 when Rectron commissioned a plant in China to enhance our competitive advantage and increase discrete product manufacturing capacity.

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