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BUK6213-30A

Philips Semiconductors

BUK6213-30A by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 102 W; No. of Elements: 1; Maximum Drain Current (ID): 64 A;

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

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Anansix

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Vyrian

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AZTECH Wire

Italy . 6,529 parts In-Stock

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One Stop Electronics

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Kepictronics

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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UNI Independent Distributors

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Northwest PG Solutions

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Corphita

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Supply Digital

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Technical Specifications

Power Field Effect Transistors (FET) BUK6213-30A attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

64 A

Maximum Drain Current (ID):

64 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

BUK6213-30A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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