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BS170AMO

Philips Semiconductors

BS170AMO by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 4,117 parts In-Stock

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Digiode

USA . 862 parts In-Stock

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Anansix

USA . 323 parts In-Stock

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Native Components

USA . 71 parts In-Stock

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$0.439

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$0.421

71

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Northwest PG Solutions

USA . 380 parts In-Stock

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$0.483

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$0.426

380

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One Stop Electronics

USA . 1,589 parts In-Stock

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$64.050

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UNI Independent Distributors

Spain . 2,543 parts In-Stock

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Corphita

USA . 1,418 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) BS170AMO attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.5 A

Maximum Drain Current (ID):

.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

BS170AMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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