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BLF548

Philips Semiconductors

BLF548 by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Drain Current (ID): 15 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;

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Vyrian

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Digiode

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Anansix

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M&R Communications

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Manotoh

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ECAB

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Electronics Depot

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Native Components

USA . 287 parts In-Stock

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$0.730

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Northwest PG Solutions

USA . 682 parts In-Stock

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One Stop Electronics

USA . 257 parts In-Stock

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$63.050

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UNI Independent Distributors

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Corphita

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Technical Specifications

Power Field Effect Transistors (FET) BLF548 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

15 A

Maximum Drain Current (ID):

15 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Trade Compliance

BLF548 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-585-5685, 5961015855685

NIIN

015855685

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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