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BLF544B

Philips Semiconductors

BLF544B by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 1 A; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;

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4

In-Stock Inventory

1k+

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Digiode

USA . 3,494 parts In-Stock

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Anansix

USA . 1,811 parts In-Stock

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Vyrian

USA . 316 parts In-Stock

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Manotoh

Italy . 40 parts In-Stock

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Native Components

USA . 492 parts In-Stock

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$0.931

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Northwest PG Solutions

USA . 1,919 parts In-Stock

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$1.024

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One Stop Electronics

USA . 1,264 parts In-Stock

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$32.050

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Corphita

USA . 2,468 parts In-Stock

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UNI Independent Distributors

Spain . 2,236 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) BLF544B attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Trade Compliance

BLF544B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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