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BGE885

Philips Semiconductors

BGE885 by Philips Semiconductors

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 240 mA; Minimum Operating Temperature: -20 Cel; Power Supplies (V): 24;

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,607 parts In-Stock

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Digiode

USA . 2,039 parts In-Stock

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Vyrian

USA . 164 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.991

100+ parts

$0.902

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$0.813

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500

$0.991

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Corohmni

South Africa . 186 parts In-Stock

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$2.518

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One Stop Electronics

USA . 833 parts In-Stock

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$9.000

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833

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UNI Independent Distributors

Spain . 6,376 parts In-Stock

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Corphita

USA . 3,473 parts In-Stock

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Northwest PG Solutions

USA . 2,175 parts In-Stock

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Native Components

USA . 950 parts In-Stock

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950

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Technical Specifications

RF & Microwave Amplifiers BGE885 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Philips Semiconductors

Specs

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

MOT CASE 714B

Power Supplies (V):

24

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

240 mA

Technology:

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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