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BF1100WR

Philips Semiconductors

BF1100WR by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .03 A;

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Bristol Electronics

USA . 3,000 parts In-Stock

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Anansix

USA . 2,387 parts In-Stock

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Digiode

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Vyrian

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One Stop Electronics

USA . 823 parts In-Stock

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$48.050

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Alle Elektronik GmbH

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Glotronic Ltd.

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Kepictronics

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UNI Independent Distributors

Spain . 1,347 parts In-Stock

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Northwest PG Solutions

USA . 1,324 parts In-Stock

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Assy Fe

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Native Components

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Perfect Parts

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Corphita

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Technical Specifications

Power Field Effect Transistors (FET) BF1100WR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

BF1100WR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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