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2N7002_R2_10001

Panjit International

2N7002_R2_10001 by Panjit International

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .25 A;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) 2N7002_R2_10001 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Panjit International

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Trade Compliance

2N7002_R2_10001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Panjit International

PANJIT is a public company founded in May 1986. We are a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines. With insight observation and core technologies, PANJIT is able to continuously launch low profile products and accurate power rating devices which conforms to the customer needs. PANJIT commits to serve customers with the best service, thus we have established sales offices worldwide. We have sites in North America, Germany, Korea and China which allows us to provide better and prompt service.

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