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OP800B

Optek Technology

OP800B by Optek Technology

OP800B by Optek Technology is a single phototransistor with peak wavelength of 890nm. It operates b/w -65°C to 125°C, with max power dissipation of 0.25W. Ideal for applications requiring infrared detection and through hole mounting in compact spaces.

Median Price

$3.120

Lifecycle Status

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4

In-Stock Inventory

1k+

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DigiKey

USA . 984 parts In-Stock

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$3.120

100+ parts

$2.910

1k+ parts

$2.638

10k+ parts

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984

$3.120

$2.910

$2.638

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Mouser Electronics

USA . 467 parts In-Stock

1+ parts

$3.840

100+ parts

$3.730

1k+ parts

$2.910

10k+ parts

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467

$3.840

$3.730

$2.910

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TTI

USA . 760 parts In-Stock

1+ parts

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100+ parts

$2.910

1k+ parts

$2.640

10k+ parts

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760

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$2.910

$2.640

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Electronic Expediters

USA . 25 parts In-Stock

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25

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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Authorized Procurement Solutions

USA . 870 parts In-Stock

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870

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Overview

Discover the superior quality and reliability of the OP800B phototransistor from Optek Technology, a trusted manufacturer known for their cutting-edge optoelectronic components. With a peak wavelength of 890nm, this single configuration phototransistor offers exceptional performance in a compact 4.65mm size. Perfect for applications requiring precise light detection, the OP800B provides a nominal light current of 1.8mA and a minimum collector-emitter breakdown voltage of 30V. Trust in Optek Technology to deliver value and innovation with the OP800B phototransistor.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration simplifies the design and installation process, making it a convenient choice for applications requiring only one phototransistor.

Size: 4.65 mm

The compact size of 4.65 mm allows for easy integration into various devices and applications without taking up much space.

Peak Wavelength (nm): 890

With a peak wavelength of 890 nm, this phototransistor is ideal for detecting infrared radiation, making it suitable for applications where IR sensing is required.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, this product offers high sensitivity to light, enabling precise detection and measurement of light levels in a wide range of applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures reliable performance even in demanding environments that experience elevated temperatures.

Shape: ROUND

The round shape of this phototransistor simplifies mounting and alignment processes, making it easier to integrate into various device designs.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C allows this phototransistor to function effectively even in extremely cold conditions, expanding its usability in diverse environments.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25 W, this phototransistor can handle significant power levels without overheating, ensuring long-term reliability.

Nominal Light Current: 1.8 mA

The nominal light current of 1.8 mA indicates the level of output current generated in response to incoming light, providing a reliable measure of light intensity.

Maximum Dark Current: 100 nA

The low maximum dark current of 100 nA ensures minimal leakage current in the absence of light, leading to accurate detection and measurement in low-light conditions.

Infrared (IR) Range: YES

The inclusion of an Infrared (IR) range capability enhances the versatility of this phototransistor, allowing it to detect and respond to IR signals in various applications.

Minimum Collector-emitter Breakdown Voltage: 30 V

The high minimum collector-emitter breakdown voltage of 30 V provides robust protection against voltage surges, enhancing the durability and reliability of the phototransistor.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature facilitates easy and secure installation of the phototransistor onto PCBs or other electronic assemblies, ensuring a stable and reliable connection.

Maximum On State Current: 0.05 A

The maximum on-state current of 0.05 A indicates the maximum current that can flow through the phototransistor when it is in the active state, providing a clear threshold for safe operation.

Technical Specifications

Phototransistors OP800B attributes and parameters. Explore more Phototransistors devices from Optek Technology

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

Nominal Light Current:

1.8 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.05 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Peak Wavelength (nm):

890

Maximum Power Dissipation:

.25 W

Shape:

ROUND

Size:

4.65 mm

Sub-Category:

Photo Transistors

Trade Compliance

OP800B Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Optek Technology

Optek Technology Capabilities We design and manufacture innovative optoelectronic solutions for sensing and illumination applications. Our capabilities also include the design and manufacture of standard and application-specific lighting components and assemblies for applications in signage, entertainment, exterior and interior lighting, automotive and high reliability applications.

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