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SZNZ9F7V5ST5G

Onsemi

SZNZ9F7V5ST5G by Onsemi

SZNZ9F7V5ST5G by Onsemi is a Zener diode with 7.5V nominal reference voltage, 2.15% max voltage tolerance, and 30 ohm max dynamic impedance. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 standard compliance and unidirectional polarity.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 160,000 parts In-Stock

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Flip Electronics

USA . 152,000 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 812 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 8,090 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

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Overview

Discover the high-quality SZNZ9F7V5ST5G Zener Diode by Onsemi, designed for reliable performance and precision. With a robust construction and advanced technology, this diode is perfect for a wide range of applications. Whether you're looking to regulate voltage in electronic circuits or protect sensitive components, this diode offers unmatched value and benefits. Trust in Onsemi's reputation for excellence and choose the SZNZ9F7V5ST5G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and protection for the diode, ensuring longevity and reliability.

Working Test Current: 5 mA

The low working test current of 5 mA allows for efficient operation and reduced power consumption.

Surface Mount: YES

Surface mount capability makes installation and integration easy in various electronic circuits and PCBs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, the diode is suitable for applications where heat may be a concern.

Nominal Reference Voltage: 7.5 V

The Zener diode with a reference voltage of 7.5V is ideal for voltage regulation and protection in electronic circuits.

Maximum Power Dissipation: 0.25 W

The diode's maximum power dissipation of 0.25W allows it to handle higher power levels without damage, ensuring reliability.

Technical Specifications

Zener Diodes SZNZ9F7V5ST5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

30 ohm

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

7.5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.15 %

Working Test Current:

5 mA

Trade Compliance

SZNZ9F7V5ST5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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