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SZNZ8F2V7MX2WT5G

Onsemi

SZNZ8F2V7MX2WT5G by Onsemi

SZNZ8F2V7MX2WT5G by Onsemi is a Zener diode with 2 terminals, operating temperature range of -65 to 150 °C. It has a max reverse current of 20 uA and forward voltage of 0.9 V. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,267 parts In-Stock

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Digiode

USA . 603 parts In-Stock

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603

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AZTECH Wire

Italy . 708 parts In-Stock

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$20.800

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708

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SupplyDigital Components

Austria . 7,342 parts In-Stock

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Kulean Microsystems

USA . 6,628 parts In-Stock

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Problanco Electronics

Mexico . 5,193 parts In-Stock

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TANS Electronics

Latvia . 4,927 parts In-Stock

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Corphita

USA . 2,125 parts In-Stock

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UHIMA Technologies

Türkiye . 334 parts In-Stock

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Corohmni

South Africa . 68 parts In-Stock

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Overview

Experience the reliability and precision of the SZNZ8F2V7MX2WT5G Zener Diode by Onsemi. Manufactured with top-quality materials and cutting-edge technology, this diode offers unmatched performance in a variety of applications. Whether you're working on automotive electronics or industrial machinery, this Zener diode ensures stable voltage regulation and protection against overvoltage. Trust Onsemi's reputation for excellence and choose the SZNZ8F2V7MX2WT5G for your next project. Unlock the potential of your circuits with this high-value component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for long-lasting performance.

Working Test Current: 5 mA

Efficient performance at the specified current level.

Surface Mount: YES

Easy to install and saves space on circuit board.

Maximum Reverse Current: 20 uA

Low reverse current for effective operation.

Maximum Power Dissipation: 0.25 W

Can handle moderate power dissipation for reliable use.

Technology: ZENER

Uses Zener technology for precise voltage regulation.

Technical Specifications

Zener Diodes SZNZ8F2V7MX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

2.7 V

Maximum Reverse Current:

20 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

10 %

Working Test Current:

5 mA

Trade Compliance

SZNZ8F2V7MX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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