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SZ1SMB5936BT3G-VF01

Onsemi

SZ1SMB5936BT3G-VF01 by Onsemi

SZ1SMB5936BT3G-VF01 by Onsemi is a Zener diode with 22.8V reverse test voltage, 30V nominal reference voltage, and 1uA max reverse current. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 compliance and small outline package style.

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Flip Electronics

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Aztec Data Supply Inc.

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Ampacity Inc.

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AZTECH Wire

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Component Stockers USA

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Overview

Discover the SZ1SMB5936BT3G-VF01 by Onsemi, a top-of-the-line Zener Diode that guarantees high-quality performance and reliability. Manufactured by the trusted brand Onsemi, this product is perfect for a wide range of applications due to its superior design and durability. With a maximum reverse voltage of 22.8V and a maximum power dissipation of 0.55W, this Zener Diode offers unmatched value and benefits to customers seeking reliable electronic components. Upgrade your projects with the SZ1SMB5936BT3G-VF01 and experience the advantages of cutting-edge technology in a compact package.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it a reliable choice for long-term use.

Config: SINGLE

The single configuration simplifies installation and wiring, making it user-friendly for various applications.

Working Test Current: 12.5 mA

With a higher working test current, this zener diode can handle greater loads and ensure stable performance.

Surface Mount: YES

The surface mount feature allows for easy and convenient placement on circuit boards, saving space and simplifying assembly.

Maximum Reverse Current: 1 uA

The low maximum reverse current ensures minimal power loss and improves overall efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for easy integration into different circuit designs.

Reverse Test Voltage: 22.8 V

The high reverse test voltage rating offers protection against voltage spikes and ensures the stability of the circuit.

No. of Terminals: 2

With only two terminals, this zener diode is easy to connect and can be quickly integrated into circuits without complexity.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance ensures consistent performance and reliability in regulating voltage levels within a narrow range.

Maximum Knee Impedance: 750 ohm

The low knee impedance allows for efficient voltage regulation and smooth operation in various circuit applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance makes this zener diode suitable for use in a wide range of environments and applications.

Maximum Dynamic Impedance: 28 ohm

The low dynamic impedance helps to maintain stable voltage regulation and signal integrity in electronic circuits.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature rating ensures reliable performance even in extreme cold conditions.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and ensures secure connections in the circuit.

Terminal Position: DUAL

The dual terminal position allows for flexibility in installation and makes it easier to connect the diode in different circuit configurations.

Maximum Power Dissipation: 0.55 W

The high maximum power dissipation rating ensures the diode can handle power spikes without damage, increasing overall reliability.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, the diode can withstand reflow soldering processes without degradation.

Peak Reflow Temperature °C: 260

The high peak reflow temperature rating ensures the diode can withstand high-temperature soldering processes without damage.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, this zener diode meets automotive industry requirements for reliability and performance.

Diode Type: ZENER DIODE

As a zener diode, this product is specifically designed for voltage regulation applications, making it a reliable choice for maintaining stable voltage levels.

Maximum Forward Voltage (VF): 1.5 V

The low maximum forward voltage drop minimizes power loss and ensures efficient operation in the forward bias mode.

Nominal Reference Voltage: 30 V

The 30V nominal reference voltage provides a stable reference point for regulating voltages in electronic circuits.

Technology: ZENER

Based on zener technology, this diode offers precise voltage regulation and protection against voltage surges, making it ideal for sensitive electronic components.

Terminal Form: C BEND

The C bend terminal form makes it easy to mount and connect the diode in various circuit configurations, saving time and effort during assembly.

No. of Elements: 1

With one diode element, this product simplifies circuit design and integration, making it a cost-effective solution for voltage regulation.

Moisture Sensitivity Level (MSL): 1

With an MSL of 1, this diode is not sensitive to moisture, ensuring reliable performance even in high-humidity environments.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the diode only allows current flow in one direction, preventing reverse current and protecting the circuit.

Diode Element Material: SILICON

Made of silicon, the diode element material offers high efficiency and reliability in voltage regulation applications.

Technical Specifications

Zener Diodes SZ1SMB5936BT3G-VF01 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Knee Impedance:

750 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

30 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

22.8 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

12.5 mA

Trade Compliance

SZ1SMB5936BT3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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