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SZ1SMB5926BT3G

Onsemi

SZ1SMB5926BT3G by Onsemi

SZ1SMB5926BT3G by Onsemi is a Zener diode with 11V nominal reference voltage, 5.5 ohm max dynamic impedance, and 150°C max operating temp. Ideal for automotive applications due to AEC-Q101 standard compliance and unidirectional polarity.

Median Price

$0.654

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 1,691 parts In-Stock

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$1.060

100+ parts

$0.432

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$0.302

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$0.243

1,691

$1.060

$0.432

$0.302

$0.243

Mouser Electronics

USA . 20,000 parts In-Stock

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$0.248

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$0.248

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Nova Conductors

Japan . 600 parts In-Stock

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$0.354

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$0.354

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Digiode

USA . 2,239 parts In-Stock

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$1.150

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NAC Semi

USA . 60,000 parts In-Stock

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$0.291

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Vyrian

USA . 10,934 parts In-Stock

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Flip Electronics

USA . 8,616 parts In-Stock

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NexGen Digital

USA . 2,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 465 parts In-Stock

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Bristol Electronics

USA . 133 parts In-Stock

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$0.366

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Microfarads

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Aztec Data Supply Inc.

USA . 1,196 parts In-Stock

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$0.090

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$0.090

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Ampacity Inc.

Singapore . 10,949 parts In-Stock

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$0.227

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Semicontronic

India . 11,975 parts In-Stock

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$0.230

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$0.224

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$0.223

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Corohmni

South Africa . 329 parts In-Stock

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$0.267

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Argo Parts USA

USA . 4,444 parts In-Stock

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$0.354

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$0.343

4,444

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Continental Prestige Electronics

USA . 3,326 parts In-Stock

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$0.354

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$0.347

3,326

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Corphita

USA . 1,659 parts In-Stock

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$1.089

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QUARKTWIN TECHNOLOGY LTD

USA . 27,823 parts In-Stock

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TANS Electronics

Latvia . 5,895 parts In-Stock

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Problanco Electronics

Mexico . 4,842 parts In-Stock

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Perfect Parts

USA . 4,726 parts In-Stock

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Lixinc

USA . 3,284 parts In-Stock

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iodParts Technologies Inc.

India . 3,177 parts In-Stock

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SupplyDigital Components

Austria . 1,637 parts In-Stock

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UHIMA Technologies

Türkiye . 671 parts In-Stock

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Kulean Microsystems

USA . 104 parts In-Stock

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Overview

Discover the high-quality SZ1SMB5926BT3G Zener Diode by Onsemi, a leading manufacturer known for its innovative solutions in the electronic components industry. Ideal for a variety of applications, this Zener diode offers reliable performance and precise voltage regulation. With a robust construction and superior technology, customers can trust in the value, benefits, and advantages that this product brings to their projects. Upgrade your designs with the SZ1SMB5926BT3G and experience unparalleled quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the Zener diode lightweight and durable, making it easy to handle and install in various applications.

Working Test Current: 34.1 mA

The high working test current of 34.1 mA allows the Zener diode to operate efficiently and reliably in different circuit configurations.

Surface Mount: YES

Being surface mountable, the Zener diode can be easily mounted on PCBs, saving space and simplifying the assembly process.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance of 5% ensures accurate voltage regulation, making the Zener diode suitable for precision applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the Zener diode to withstand elevated temperatures, ensuring reliable performance in harsh environments.

Maximum Dynamic Impedance: 5.5 ohm

The low maximum dynamic impedance of 5.5 ohms ensures efficient voltage regulation and stability in the circuit where the Zener diode is used.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable electrical connection and prevents corrosion, enhancing the overall performance and lifespan of the Zener diode.

Nominal Reference Voltage: 11 V

The nominal reference voltage of 11V makes the Zener diode suitable for applications that require precise voltage regulation at this specific value.

Technology: ZENER

The ZENER technology used in this diode ensures stable and precise voltage regulation across a wide range of operating conditions, making it a reliable choice for various applications.

Technical Specifications

Zener Diodes SZ1SMB5926BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

5.5 ohm

JESD-30 Code:

R-PDSO-L2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

11 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

34.1 mA

Trade Compliance

SZ1SMB5926BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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