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SS1003EJ

Onsemi

SS1003EJ by Onsemi

SS1003EJ by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.39V and output current of 1A. It has a fast reverse recovery time of 0.01us, making it suitable for high-speed applications in electronics where low power loss is critical. This surface-mount diode operates at temperatures up to 125 °C, ideal for various industrial and consumer electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,890 parts In-Stock

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Digiode

USA . 1,039 parts In-Stock

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SupplyDigital Components

Austria . 7,270 parts In-Stock

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Problanco Electronics

Mexico . 6,686 parts In-Stock

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TANS Electronics

Latvia . 5,573 parts In-Stock

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UHIMA Technologies

Türkiye . 725 parts In-Stock

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Corphita

USA . 572 parts In-Stock

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Corohmni

South Africa . 118 parts In-Stock

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Kulean Microsystems

USA . 45 parts In-Stock

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Overview

Unlock new possibilities with the SS1003EJ by Onsemi. Designed with precision and excellence, this Schottky rectifier diode offers unparalleled performance and reliability. Ideal for a wide range of applications, this single-configured surface mount diode boasts a maximum output current of 1A and a low forward voltage of 0.39V, making it highly efficient. Whether you're looking to enhance power conversion or improve circuit efficiency, the SS1003EJ delivers exceptional value and benefits, making it the perfect choice for your next project.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes installation and compatibility straightforward and simple.

Surface Mount: YES

Surface mount capability allows for easy and space-saving integration onto circuit boards.

Maximum Reverse Recovery Time: 0.01 us

Ultra-fast reverse recovery time ensures efficient switching and minimal power loss.

Maximum Operating Temperature: 125 °C

High operating temperature capability ensures reliability in various operating conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting alternating current (AC) to direct current (DC) with minimal voltage drop.

Maximum Forward Voltage (VF): 0.39 V

Low forward voltage drop ensures energy efficiency and minimal heat generation.

Maximum Output Current: 1 A

Suitable for low to moderate current applications where precise current handling is required.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, making it ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

Handles moderate reverse voltage levels with reliability, suitable for a range of circuit designs.

Maximum Non Repetitive Peak Forward Current: 5 A

Capable of handling short-term high peak current levels without damage, providing robust performance under transient conditions.

Technical Specifications

Diodes & Rectifiers SS1003EJ attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.39 V

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SS1003EJ Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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