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SS10015M

Onsemi

SS10015M by Onsemi

SS10015M by Onsemi is a Schottky rectifier diode with a max reverse recovery time of 0.01 us and a max forward voltage of 0.32 V. It operates at temperatures up to 125 °C, making it suitable for applications requiring fast switching speeds and low power loss in surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,150 parts In-Stock

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Digiode

USA . 280 parts In-Stock

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Kulean Microsystems

USA . 6,506 parts In-Stock

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Assy Fe

Spain . 2,000 parts In-Stock

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SupplyDigital Components

Austria . 1,146 parts In-Stock

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UHIMA Technologies

Türkiye . 772 parts In-Stock

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Corphita

USA . 640 parts In-Stock

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TANS Electronics

Latvia . 374 parts In-Stock

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Corohmni

South Africa . 341 parts In-Stock

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Problanco Electronics

Mexico . 53 parts In-Stock

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Overview

Unleash the power of innovation with the SS10015M by Onsemi. Crafted with precision and reliability, this rectifier diode is a game-changer in the field of electronics. Ideal for a wide range of applications, from power supplies to battery chargers, this SCHOTTKY technology marvel offers unparalleled performance and efficiency. Experience seamless operation and enhanced productivity with the SS10015M, setting new standards in quality and value for customers seeking cutting-edge solutions. Elevate your projects to new heights with Onsemi's superior craftsmanship and expertise.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and installation, making it easier to integrate into various electronic systems.

Surface Mount: YES

Surface mount technology allows for easy and compact placement on PCBs, saving space and enabling efficient circuit layout.

Maximum Reverse Recovery Time: 0.01 us

Fast reverse recovery time ensures minimal power loss and high efficiency in switching applications.

Maximum Operating Temperature: 125 °C

Higher operating temperature tolerance allows for reliable performance in a wide range of environmental conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode configuration enables efficient conversion of AC to DC current, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.32 V

Low forward voltage drop leads to reduced power dissipation and improved energy efficiency in electronic circuits.

Maximum Output Current: 0.001 A

Able to handle low output currents, making it ideal for low-power applications where precision is required.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speed and low forward voltage drop, enhancing performance in high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 15 V

With a high repetitive peak reverse voltage rating, this diode is suitable for handling moderate voltage levels in various electronic circuits.

Maximum Non Repetitive Peak Forward Current: 10 A

Capable of handling short-term high current spikes, providing protection and reliability in transient conditions.

Technical Specifications

Diodes & Rectifiers SS10015M attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.32 V

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.001 A

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SS10015M Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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