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SS1003EJ-TR

Onsemi

SS1003EJ-TR by Onsemi

SS1003EJ-TR by Onsemi is a Schottky rectifier diode with VF of 0.39V and 1A output current. It has a fast reverse recovery time of 0.01us, ideal for high-speed applications. With a max operating temp of 125 °C, it's suitable for surface mount designs in various electronic circuits.

Median Price

$0.086

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

32,000

-

$0.092

$0.077

$0.068

DigiKey

USA . 32,000 parts In-Stock

1+ parts

-

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$0.080

32,000

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$0.080

Verical

USA . 32,000 parts In-Stock

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$0.086

32,000

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$0.086

Distributors (In-Stock)

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Digiode

USA . 2,466 parts In-Stock

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$0.072

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2,466

$0.072

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Vyrian

USA . 687 parts In-Stock

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$0.076

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687

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DigiKey Marketplace

USA . 32,000 parts In-Stock

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32,000

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Distributors (Availability)

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Corphita

USA . 97 parts In-Stock

1+ parts

$0.068

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97

$0.068

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Corohmni

South Africa . 397 parts In-Stock

1+ parts

$0.076

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397

$0.076

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Component Stockers USA

USA . 27,593 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

27,593

$0.080

$0.070

$0.070

$0.070

Continental Prestige Electronics

USA . 32,000 parts In-Stock

1+ parts

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$0.062

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32,000

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$0.062

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Problanco Electronics

Mexico . 5,008 parts In-Stock

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TANS Electronics

Latvia . 3,460 parts In-Stock

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SupplyDigital Components

Austria . 3,203 parts In-Stock

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Kulean Microsystems

USA . 737 parts In-Stock

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UHIMA Technologies

Türkiye . 165 parts In-Stock

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Overview

Discover the SS1003EJ-TR by Onsemi, a high-quality Schottky rectifier diode designed for efficiency and reliability. Manufactured by Onsemi, known for their superior products and innovative technology, this diode offers exceptional performance in various applications. With a maximum output current of 1A and a low forward voltage of 0.39V, this diode is perfect for power management and voltage regulation. Trust Onsemi to provide you with the best quality components for your electronic needs.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes this diode simple and easy to use in various applications without needing to worry about complex setups.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.01 us

The extremely low reverse recovery time ensures fast switching speeds, making this diode ideal for high frequency applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC, making it suitable for power supply and rectification applications.

Maximum Forward Voltage (VF): 0.39 V

The low forward voltage drop results in minimal power loss and high efficiency, making it an energy-efficient choice for power electronics.

Maximum Output Current: 1 A

With a high maximum output current, this diode can handle substantial current loads, making it suitable for various power-related applications.

Technology: SCHOTTKY

The Schottky technology offers low forward voltage drop and fast switching speeds, making this diode ideal for high frequency and low power loss applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage allows for reliable operation in circuits with higher voltage requirements, ensuring longevity and stability.

Maximum Non Repetitive Peak Forward Current: 5 A

The ability to handle high peak forward currents makes this diode suitable for applications with transient current spikes, ensuring reliability under fluctuating load conditions.

Technical Specifications

Diodes & Rectifiers SS1003EJ-TR attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.39 V

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SS1003EJ-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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