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SMS05T3

Onsemi

SMS05T3 by Onsemi

SMS05T3 by Onsemi is a 4-element TRANS VOLTAGE SUPPRESSOR DIODE with 6.6V breakdown voltage and 350W peak power dissipation. Commonly used for transient suppression in electronics due to its UNIDIRECTIONAL polarity and 9.8V clamping voltage.

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,449 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 6,998 parts In-Stock

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Problanco Electronics

Mexico . 6,134 parts In-Stock

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Kulean Microsystems

USA . 4,658 parts In-Stock

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TANS Electronics

Latvia . 2,101 parts In-Stock

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Corphita

USA . 1,957 parts In-Stock

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UHIMA Technologies

Türkiye . 502 parts In-Stock

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Corohmni

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Overview

Enhance your electronic devices with the SMS05T3 by Onsemi, a high-quality transient suppression device that offers unparalleled protection against voltage spikes. Manufactured by Onsemi, a trusted industry leader, this product is designed for common anode configurations with four elements, ensuring reliable performance in a compact, surface-mount package. Ideal for a variety of applications, this diode provides peace of mind with its maximum clamping voltage of 9.8V and nominal breakdown voltage of 6.6V. Trust Onsemi to deliver superior quality and performance with the SMS05T3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection, making the device reliable in various environments.

Config: COMMON ANODE, 4 ELEMENTS

Common anode configuration with 4 elements allows for effective transient suppression and protection against voltage spikes.

Surface Mount: YES

Surface mount capability makes installation easier and more convenient in modern electronics manufacturing processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

High maximum non repetitive peak reverse power dissipation means the device can handle large transient events without damage.

Nominal Breakdown Voltage: 6.6 V

Nominal breakdown voltage of 6.6V ensures protection against overvoltage conditions within a specific range.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space on a PCB and easy integration into circuit designs.

No. of Terminals: 6

Having 6 terminals provides flexibility in circuit connections and allows for more complex circuit designs.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables compact and efficient device placement.

Terminal Finish: TIN LEAD

Tin-lead terminal finish ensures good solderability and reliable electrical connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and soldering options for the device.

Maximum Power Dissipation: 0.225 W

High maximum power dissipation allows the device to handle transient events efficiently without overheating.

Minimum Breakdown Voltage: 6 V

Minimum breakdown voltage of 6V ensures protection against lower voltage spikes and surges.

Maximum Breakdown Voltage: 7.2 V

Maximum breakdown voltage of 7.2V provides protection against higher voltage transient events.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type ensures effective suppression of voltage transients in the circuit.

Technology: AVALANCHE

Avalanche technology enables the device to handle high energy transients by utilizing avalanche breakdown characteristics.

Terminal Form: GULL WING

Gull wing terminal form allows for easy surface mounting and efficient heat dissipation during operation.

No. of Elements: 4

Having 4 elements provides multiple layers of protection against transient events, increasing the device's reliability.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that transient voltages are suppressed in one direction only, protecting the circuit from damage.

Maximum Clamping Voltage: 9.8 V

High maximum clamping voltage indicates the device's ability to limit transient voltage spikes to a safe level, protecting downstream components.

Diode Element Material: SILICON

Using silicon as the diode element material ensures high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SMS05T3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

6.6 V

Maximum Clamping Voltage:

9.8 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

4

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMS05T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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