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SMS05T1

Onsemi

SMS05T1 by Onsemi

SMS05T1 by Onsemi is a 4-element TRANS VOLTAGE SUPPRESSOR DIODE with 350W peak power dissipation, 6.6V breakdown voltage, and 9.8V clamping voltage. Commonly used for transient suppression in electronic circuits due to its UNIDIRECTIONAL polarity and AVALANCHE technology.

Median Price

$0.698

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,722 parts In-Stock

1+ parts

$1.310

100+ parts

$0.418

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$0.322

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1,722

$1.310

$0.418

$0.322

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Rochester

USA . 3,050 parts In-Stock

1+ parts

-

100+ parts

$0.087

1k+ parts

$0.072

10k+ parts

$0.064

3,050

-

$0.087

$0.072

$0.064

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 749 parts In-Stock

1+ parts

$0.067

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749

$0.067

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Chip Stock

USA . 34,000 parts In-Stock

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34,000

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Inventory MP

USA . 14,396 parts In-Stock

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Bristol Electronics

USA . 14,396 parts In-Stock

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Vyrian

USA . 4,919 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 2,975 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,400 parts In-Stock

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Microfarads

USA . 1,070 parts In-Stock

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Prism Electronics

USA . 303 parts In-Stock

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Semi Source

USA . 92 parts In-Stock

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A2Z Electronics, Inc.

USA . 25 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,894 parts In-Stock

1+ parts

$0.064

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1,894

$0.064

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Corohmni

South Africa . 448 parts In-Stock

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$0.067

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448

$0.067

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AZTECH Wire

Italy . 1,079 parts In-Stock

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$22.000

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Kepictronics

USA . 42,000 parts In-Stock

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Perfect Parts

USA . 10,675 parts In-Stock

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TANS Electronics

Latvia . 7,354 parts In-Stock

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Problanco Electronics

Mexico . 6,805 parts In-Stock

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Kulean Microsystems

USA . 6,779 parts In-Stock

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Continental Prestige Electronics

USA . 3,050 parts In-Stock

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$0.061

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$0.061

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Authorized Procurement Solutions

USA . 1,722 parts In-Stock

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GreenTree Electronics

Israel . 1,722 parts In-Stock

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Assy Fe

Spain . 1,267 parts In-Stock

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UHIMA Technologies

Türkiye . 300 parts In-Stock

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SupplyDigital Components

Austria . 133 parts In-Stock

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Overview

Enhance the reliability of your electronic devices with the SMS05T1 by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi offers a top-of-the-line product that provides superior protection against voltage spikes and surges. Ideal for a wide range of applications, this common anode diode array boasts high-quality construction and advanced technology, ensuring optimal performance and durability. Trust Onsemi to deliver value, benefits, and advantages that will safeguard your equipment and give you peace of mind. Choose the SMS05T1 for unbeatable quality and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

Capable of handling high power surges, making it suitable for applications where transient suppression is critical.

Nominal Breakdown Voltage: 6.6 V

Provides reliable protection by triggering at a specified voltage level, preventing damage to connected equipment.

Surface Mount: YES

Easy to install and saves space on the circuit board, making it ideal for compact electronic devices.

No. of Elements: 4

Multiple elements provide redundancy and enhanced protection against surges, ensuring the reliability of the device.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of this diode type ensures efficient suppression of voltage spikes, safeguarding sensitive electronics.

Maximum Clamping Voltage: 9.8 V

Limits the peak voltage to a safe level, preventing damage to downstream components during transient events.

Technical Specifications

Transient Suppression Devices SMS05T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

6.6 V

Maximum Clamping Voltage:

9.8 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

4

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMS05T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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