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SD05T3G

Onsemi

SD05T3G by Onsemi

SD05T3G by Onsemi is a single avalanche diode with 6.7V breakdown voltage and 350W peak reverse power dissipation. It is a unidirectional transient suppression device in a small outline package, ideal for protecting sensitive electronics from voltage spikes in various applications.

Median Price

$0.273

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics (Authorized)

USA . 70,000 parts In-Stock

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70,000

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Distributors (In-Stock)

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Digiode

USA . 682 parts In-Stock

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$0.266

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682

$0.266

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Vyrian

USA . 2,422 parts In-Stock

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$0.280

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2,422

$0.280

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Chip Stock

USA . 276,457 parts In-Stock

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276,457

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Flip Electronics

USA . 70,000 parts In-Stock

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70,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,621 parts In-Stock

1+ parts

$0.252

100+ parts

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1,621

$0.252

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Corohmni

South Africa . 217 parts In-Stock

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$0.280

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217

$0.280

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SupplyDigital Components

Austria . 8,195 parts In-Stock

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8,195

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Problanco Electronics

Mexico . 6,995 parts In-Stock

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6,995

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Kulean Microsystems

USA . 5,442 parts In-Stock

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5,442

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TANS Electronics

Latvia . 694 parts In-Stock

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694

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UHIMA Technologies

Türkiye . 65 parts In-Stock

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65

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Overview

Upgrade your electronic devices with the SD05T3G by Onsemi, a top-of-the-line Transient Suppression Device that ensures superior quality and reliability. Manufactured by industry leader Onsemi, this product offers unmatched protection against voltage spikes and surges, making it ideal for a wide range of applications. With a compact design and advanced technology, this device provides customers with peace of mind knowing their electronics are safeguarded. Experience the value and benefits of the SD05T3G and enjoy uninterrupted performance with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the device suitable for various environments.

Surface Mount: YES

Enables easy and efficient installation on PCBs, saving time and effort.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

Can handle high power surges effectively, ensuring protection for connected devices.

Nominal Breakdown Voltage: 6.7 V

Provides reliable overvoltage protection by activating at a specific voltage threshold.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Minimum Operating Temperature: -55 °C

Capable of functioning in extremely low temperatures, making it suitable for a wide range of applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, ensuring efficient protection for sensitive electronics.

Technical Specifications

Transient Suppression Devices SD05T3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.3 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.7 V

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SD05T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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