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SD05T1

Onsemi

SD05T1 by Onsemi

The Onsemi SD05T1 is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 6.8V breakdown voltage and 350W max non-repetitive peak reverse power dissipation. It is a surface mount device in a small outline package, ideal for transient suppression applications requiring high clamping voltage protection.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 149,581 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

149,581

-

$0.053

$0.044

$0.039

DigiKey

USA . 149,581 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.070

149,581

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-

-

$0.070

Distributors (In-Stock)

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Freelance Electronics

USA . 2,714 parts In-Stock

1+ parts

$0.034

100+ parts

$0.036

1k+ parts

$0.034

10k+ parts

-

2,714

$0.034

$0.036

$0.034

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Digiode

USA . 190 parts In-Stock

1+ parts

$0.041

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-

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190

$0.041

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Chip Stock

USA . 25,000 parts In-Stock

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25,000

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Vyrian

USA . 6,307 parts In-Stock

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6,307

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NPI Materials, Inc.

USA . 85 parts In-Stock

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85

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Distributors (Availability)

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Corohmni

South Africa . 447 parts In-Stock

1+ parts

$0.034

100+ parts

-

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447

$0.034

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Corphita

USA . 1,483 parts In-Stock

1+ parts

$0.039

100+ parts

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1,483

$0.039

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AZTECH Wire

Italy . 924 parts In-Stock

1+ parts

$14.960

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924

$14.960

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Continental Prestige Electronics

USA . 170,581 parts In-Stock

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$0.037

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170,581

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$0.037

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TANS Electronics

Latvia . 6,300 parts In-Stock

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6,300

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Kulean Microsystems

USA . 4,288 parts In-Stock

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4,288

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SupplyDigital Components

Austria . 1,043 parts In-Stock

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1,043

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Problanco Electronics

Mexico . 723 parts In-Stock

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723

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UHIMA Technologies

Türkiye . 367 parts In-Stock

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367

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Overview

Unleash the power of protection with the Onsemi SD05T1 Transient Suppression Device! Manufactured by Onsemi, a trusted name in electronics, this product offers top-notch quality and reliability. Perfect for safeguarding your electronic circuits from voltage spikes and transients, the SD05T1 is a must-have for any application requiring reliable protection. Say goodbye to unexpected downtime and costly repairs - invest in the SD05T1 today and experience peace of mind knowing your electronics are safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Nominal Breakdown Voltage: 6.8 V

Offers reliable protection by triggering at the specified voltage to suppress any transient surges.

Maximum Power Dissipation: 0.2 W

Efficiently handles power spikes and provides continuous protection for the connected circuitry.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, ensuring effective and precise protection against voltage spikes.

Technical Specifications

Transient Suppression Devices SD05T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.3 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

9.8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SD05T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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