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SD05T3

Onsemi

SD05T3 by Onsemi

The Onsemi SD05T3 is a single avalanche diode with 350W peak power dissipation and 6.7V breakdown voltage. Ideal for transient suppression in electronics, it operates b/w -55 °C to 150°C, with a max clamping voltage of 14.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 983 parts In-Stock

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983

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Digiode

USA . 565 parts In-Stock

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565

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Kulean Microsystems

USA . 7,522 parts In-Stock

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SupplyDigital Components

Austria . 7,498 parts In-Stock

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Problanco Electronics

Mexico . 3,842 parts In-Stock

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Corphita

USA . 1,272 parts In-Stock

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UHIMA Technologies

Türkiye . 676 parts In-Stock

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TANS Electronics

Latvia . 197 parts In-Stock

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Corohmni

South Africa . 70 parts In-Stock

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Overview

Experience superior quality and performance with the SD05T3 by Onsemi, a leading manufacturer in the industry. As a transient suppression device, this product offers unparalleled protection against voltage spikes and surges, ensuring the safety of your electronic equipment. Whether you're in need of reliable overvoltage protection for consumer electronics, automotive applications, or industrial machinery, the SD05T3 delivers exceptional value with its high power dissipation capacity and precise breakdown voltage. Trust Onsemi to provide you with the cutting-edge technology you need to safeguard your investments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight, durable, and resistant to environmental factors, making it a good choice for transient suppression applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

With a high power dissipation rating of 350W, this transient suppression device can handle high surge currents effectively, providing reliable protection for sensitive electronic components.

Nominal Breakdown Voltage: 6.7 V

The nominal breakdown voltage of 6.7V ensures that the device triggers at the appropriate voltage level, effectively clamping transient voltages to protect downstream components.

Maximum Operating Temperature: 150 °C

The wide operating temperature range of -55 to 150 °C allows the device to function efficiently in various environmental conditions, enhancing its reliability and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures fast response times and low clamping voltages, providing superior transient voltage protection for electronic circuits.

Technical Specifications

Transient Suppression Devices SD05T3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.3 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.7 V

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SD05T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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