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SD05T1G

Onsemi

SD05T1G by Onsemi

SD05T1G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 6.8V breakdown voltage and 350W peak reverse power dissipation. Ideal for transient suppression applications, it operates b/w -55°C to 150°C, featuring a small outline package style and matte tin terminal finish.

Median Price

$0.138

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 64,600 parts In-Stock

1+ parts

$0.070

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$0.070

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$0.070

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$0.070

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$0.070

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Newark

USA . 7,299 parts In-Stock

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$0.363

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$0.166

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$0.126

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$0.363

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Mouser Electronics

USA . 13,435 parts In-Stock

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$0.400

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$0.115

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$0.103

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$0.070

13,435

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$0.115

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$0.070

Arrow

USA . 42,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 28,301 parts In-Stock

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Verical

USA . 2,135 parts In-Stock

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$0.143

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Chip1Stop

Japan . 520 parts In-Stock

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Farnell

UK . 114 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,316 parts In-Stock

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Nova Conductors

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Chip Stock

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NAC Semi

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J2 Sourcing AB

Sweden . 9,918 parts In-Stock

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Semicontronic

India . 50,242 parts In-Stock

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Ampacity Inc.

Singapore . 53,709 parts In-Stock

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Corohmni

South Africa . 160 parts In-Stock

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Corphita

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Aztec Data Supply Inc.

USA . 234 parts In-Stock

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$0.093

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$0.085

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$0.076

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Argo Parts USA

USA . 3,007 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Perfect Parts

USA . 192,672 parts In-Stock

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RC Electronics

USA . 142,776 parts In-Stock

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Metaverse IC Inc.

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Eastek

USA . 66,000 parts In-Stock

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Kepictronics

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Continental Prestige Electronics

USA . 25,360 parts In-Stock

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GreenTree Electronics

Israel . 21,000 parts In-Stock

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Lixinc

USA . 16,617 parts In-Stock

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Glotronic Ltd.

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Authorized Procurement Solutions

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Futuretech Components

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SupplyDigital Components

Austria . 4,624 parts In-Stock

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TANS Electronics

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UHIMA Technologies

Türkiye . 555 parts In-Stock

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Brazil . 250 parts In-Stock

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Lucentia Tech

USA . 250 parts In-Stock

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Overview

Enhance the reliability of your electronic devices with the Onsemi SD05T1G Transient Suppression Device. Manufactured by Onsemi, a renowned leader in the industry, this product offers unparalleled quality and performance. Ideal for applications requiring protection against voltage spikes and surges, this diode ensures your equipment operates smoothly and efficiently. With a high maximum clamping voltage and avalanche technology, the SD05T1G provides superior protection for your valuable electronics. Trust Onsemi to deliver innovative solutions that safeguard your devices, making this transient suppression device a smart choice for any project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making the product suitable for various applications.

Config: SINGLE

Simplifies the installation process and reduces complexity in the circuit design.

Surface Mount: YES

Facilitates easy placement on circuit boards, leading to efficient production processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

Ensures high power handling capability, protecting connected devices from voltage spikes.

Nominal Breakdown Voltage: 6.8 V

Provides efficient protection against overvoltage conditions within the specified range.

Package Shape: RECTANGULAR

Optimizes space utilization on the circuit board and allows for compact designs.

No. of Terminals: 2

Simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Facilitates easy handling and integration into complex electronic systems.

Maximum Operating Temperature: 150 °C

Ensures reliable operation in a wide range of temperature conditions without compromising performance.

Minimum Operating Temperature: -55 °C

Enables the device to function effectively in extreme cold environments.

Terminal Finish: MATTE TIN

Enhances solderability and provides a stable electrical connection for improved performance.

Terminal Position: DUAL

Allows for versatility in circuit configurations and facilitates dual connection options.

Maximum Power Dissipation: 0.2 W

Efficiently dissipates heat generated during operation, ensuring long-term reliability.

Minimum Breakdown Voltage: 6.2 V

Provides a safety margin for preventing voltage spikes from damaging sensitive components.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for reliable soldering during the manufacturing process, ensuring consistent quality.

Peak Reflow Temperature °C: 260

Facilitates the soldering process at high temperatures without compromising the device's performance.

Maximum Breakdown Voltage: 7.3 V

Offers additional protection against overvoltage conditions to safeguard connected devices.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for voltage suppression applications, ensuring effective protection against transient voltage spikes.

Technology: AVALANCHE

Utilizes avalanche breakdown mechanism for faster response to transient overvoltage conditions, enhancing protection capabilities.

Terminal Form: GULL WING

Facilitates easy mounting on PCBs and enhances solder joint reliability for long-lasting performance.

Maximum Repetitive Peak Reverse Voltage: 5 V

Protects against repeated voltage spikes, ensuring continuous operation without damage.

Polarity: UNIDIRECTIONAL

Offers protection in one direction, preventing damage from voltage spikes in that specific orientation.

Maximum Clamping Voltage: 9.8 V

Limits the voltage spike magnitude to a safe level, protecting downstream components from damage.

Diode Element Material: SILICON

Utilizes high-quality silicon material for superior performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SD05T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.3 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

9.8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SD05T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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