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SBRB2545CTT4G

Onsemi

SBRB2545CTT4G by Onsemi

SBRB2545CTT4G by Onsemi is a Schottky rectifier diode with 45V peak reverse voltage and 15A output current. It has a common cathode configuration, matte tin terminal finish, and is suitable for power applications. Operating temperature ranges from -65 to 175°C, making it ideal for various electronic devices.

Median Price

$0.675

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 20 parts In-Stock

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$0.675

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20

$0.675

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Rochester

USA . 155,200 parts In-Stock

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-

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$0.920

1k+ parts

$0.764

10k+ parts

$0.681

155,200

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$0.920

$0.764

$0.681

DigiKey

USA . 4,000 parts In-Stock

1+ parts

-

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$0.440

4,000

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$0.440

Flip Electronics (Authorized)

USA . 4,000 parts In-Stock

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4,000

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Distributors (In-Stock)

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DF Sales Co.

USA . 800 parts In-Stock

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$0.500

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800

$0.500

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DF Sales Co.

USA . 800 parts In-Stock

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$0.500

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800

$0.500

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Digiode

USA . 310 parts In-Stock

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$0.641

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310

$0.641

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Nova Conductors

Japan . 48 parts In-Stock

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$0.960

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48

$0.960

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Chip Stock

USA . 73,000 parts In-Stock

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Vyrian

USA . 7,374 parts In-Stock

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7,374

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Cyclops Electronics Ltd

UK . 5,978 parts In-Stock

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Flip Electronics

USA . 4,000 parts In-Stock

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J2 Sourcing AB

Sweden . 75 parts In-Stock

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75

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Distributors (Availability)

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Corohmni

South Africa . 55 parts In-Stock

1+ parts

$0.500

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55

$0.500

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Ampacity Inc.

Singapore . 52,652 parts In-Stock

1+ parts

$0.570

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52,652

$0.570

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Corphita

USA . 714 parts In-Stock

1+ parts

$0.608

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714

$0.608

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Argo Parts USA

USA . 4,624 parts In-Stock

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$0.960

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4,624

$0.960

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Continental Prestige Electronics

USA . 1,562 parts In-Stock

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$0.960

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$0.941

1,562

$0.960

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$0.941

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.960

100+ parts

$0.941

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100

$0.960

$0.941

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AZTECH Wire

Italy . 62 parts In-Stock

1+ parts

$13.750

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62

$13.750

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Kepictronics

USA . 12,800 parts In-Stock

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Perfect Parts

USA . 5,740 parts In-Stock

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SupplyDigital Components

Austria . 4,852 parts In-Stock

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TANS Electronics

Latvia . 3,375 parts In-Stock

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Problanco Electronics

Mexico . 2,360 parts In-Stock

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Kulean Microsystems

USA . 2,176 parts In-Stock

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Infinite Electronics LLP (Excess)

. 1,259 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Microchip USA

USA . 417 parts In-Stock

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UHIMA Technologies

Türkiye . 222 parts In-Stock

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Lixinc

USA . 153 parts In-Stock

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Futuretech Components

Singapore . 136 parts In-Stock

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Overview

Experience the power of innovation with the SBRB2545CTT4G by Onsemi. Crafted with precision and quality, this Schottky rectifier diode offers unparalleled performance in power applications. With a maximum output current of 15A and a maximum repetitive peak reverse voltage of 45V, this diode is designed to exceed expectations. Trust in Onsemi's reputation for excellence and choose the SBRB2545CTT4G for all your power needs. Unlock new possibilities with this cutting-edge technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring longevity and reliability in various operating conditions.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient and easy circuit connections with common cathode configuration, providing stability in power applications.

Maximum Reverse Current: 200 uA

Low reverse current ensures minimal power loss and efficient performance of the diode.

Surface Mount: YES

Facilitates easy and space-saving mounting on PCBs, making it suitable for compact electronic designs.

Maximum Operating Temperature: 175 °C

Withstands high temperatures, making it suitable for power applications that require reliable performance under elevated temperature conditions.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching compared to standard diodes, making them ideal for high-frequency and high-power applications.

Technical Specifications

Diodes & Rectifiers SBRB2545CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.82 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

200 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRB2545CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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