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SBRB1045G

Onsemi

SBRB1045G by Onsemi

SBRB1045G by Onsemi is a Schottky rectifier diode with a max output current of 10A and forward voltage of 0.84V. It is designed for power applications, operating b/w -65 to 175°C. This single-configured diode comes in a small outline package suitable for surface mount assembly.

Median Price

$0.897

Lifecycle Status

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7

In-Stock Inventory

1k+

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Mouser Electronics

USA . 171 parts In-Stock

1+ parts

$1.540

100+ parts

$0.979

1k+ parts

$0.676

10k+ parts

$0.606

171

$1.540

$0.979

$0.676

$0.606

Rochester

USA . 386 parts In-Stock

1+ parts

-

100+ parts

$0.784

1k+ parts

$0.651

10k+ parts

$0.581

386

-

$0.784

$0.651

$0.581

DigiKey

USA . 386 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.980

10k+ parts

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386

-

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$0.980

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Verical

USA . 386 parts In-Stock

1+ parts

-

100+ parts

-

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$0.814

10k+ parts

$0.726

386

-

-

$0.814

$0.726

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,406 parts In-Stock

1+ parts

$0.640

100+ parts

-

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1,406

$0.640

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Vyrian

USA . 1,322 parts In-Stock

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$0.674

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1,322

$0.674

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Chip Stock

USA . 55,000 parts In-Stock

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55,000

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Corphita

USA . 2,236 parts In-Stock

1+ parts

$0.607

100+ parts

-

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2,236

$0.607

-

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Corohmni

South Africa . 320 parts In-Stock

1+ parts

$0.674

100+ parts

-

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320

$0.674

-

-

-

Microchip USA

USA . 402 parts In-Stock

1+ parts

$4.230

100+ parts

$4.200

1k+ parts

$4.190

10k+ parts

$4.170

402

$4.230

$4.200

$4.190

$4.170

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,904 parts In-Stock

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9,904

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Kulean Microsystems

USA . 6,491 parts In-Stock

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TANS Electronics

Latvia . 4,765 parts In-Stock

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Problanco Electronics

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1,683

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Continental Prestige Electronics

USA . 1,386 parts In-Stock

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$0.566

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1,386

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$0.566

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UHIMA Technologies

Türkiye . 690 parts In-Stock

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690

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SupplyDigital Components

Austria . 73 parts In-Stock

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Kepictronics

USA . 50 parts In-Stock

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50

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Overview

Experience the superior quality and reliability of Onsemi with the SBRB1045G diode rectifier. Perfect for power applications, this Schottky technology-based diode offers a maximum output current of 10A and a maximum repetitive peak reverse voltage of 45V, ensuring seamless performance in a variety of settings. With a small outline package style and matte tin terminal finish, this product provides value and efficiency for all your electronic needs. Trust Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are known for their durability and resistance to heat and moisture, making this diode more reliable in various operating conditions.

Config: SINGLE

Single configuration diodes are commonly used for most power applications and are easier to integrate into circuits, making this product versatile and convenient for many uses.

Surface Mount: YES

Surface mount diodes are easier to install and take up less space on a circuit board, making this product suitable for applications where size and ease of installation are important.

Maximum Reverse Current: 100 uA

Low maximum reverse current indicates improved efficiency and reduced power loss, making this diode a suitable choice for power-sensitive applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and alignment on a circuit board, enhancing the overall efficiency of the layout and installation process.

No. of Terminals: 2

With only 2 terminals, this diode is easy to integrate into various circuit designs, reducing complexity and improving the overall reliability of the system.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and allows for denser and more compact designs, making this diode suitable for applications with size constraints.

Application: POWER

Designed specifically for power applications, this diode provides efficient power management and control, making it an optimal choice for power-sensitive circuits.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, ensuring reliable operation in challenging environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows this diode to function even in extremely cold conditions, making it suitable for a wide range of applications in diverse environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable connections and long-term performance of the diode.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, reducing the chances of errors and improving the overall efficiency and reliability of the system.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and layout, making it easier to integrate this diode into various configurations, improving overall system efficiency.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature saves energy and reduces the risk of heat-induced damage to the diode, ensuring long-term reliability and performance.

Peak Reflow Temperature °C: 260

High peak reflow temperature indicates the diode's ability to withstand high-temperature soldering processes, making it suitable for industrial and manufacturing applications.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality of this diode, making it a suitable choice for automotive and other high-performance applications.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC power, making this product ideal for power supply applications and rectification circuits.

Maximum Forward Voltage (VF): 0.84 V

Low maximum forward voltage indicates low power loss and improved efficiency, making this diode suitable for applications where energy efficiency is critical.

Maximum Output Current: 10 A

High maximum output current allows this diode to handle large power loads without overheating or failing, making it suitable for high-power applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds, making this product ideal for high-frequency and high-power applications where efficiency is critical.

Terminal Form: GULL WING

Gull wing terminal form allows for easy mounting and soldering on the circuit board, ensuring reliable connections and long-term performance of the diode.

Maximum Repetitive Peak Reverse Voltage: 45 V

High maximum repetitive peak reverse voltage ensures the diode can handle reverse voltage spikes without damage, making it suitable for demanding applications.

Maximum Non Repetitive Peak Forward Current: 150 A

High maximum non-repetitive peak forward current allows this diode to handle short-duration high current surges without failure, making it suitable for high-power applications.

Diode Element Material: SILICON

Silicon diodes are known for their reliability and stability over a wide range of operating conditions, making this product a durable and dependable choice for various applications.

Technical Specifications

Diodes & Rectifiers SBRB1045G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

100 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRB1045G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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