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SBRB1545CTG

Onsemi

SBRB1545CTG by Onsemi

SBRB1545CTG by Onsemi is a Schottky rectifier diode with 45V peak reverse voltage and 7.5A output current. It features common cathode configuration, small outline package style, and matte tin terminal finish. Ideal for power applications, operating b/w -65 °C to 175°C, meeting AEC-Q101 standard.

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Lifecycle Status

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1k+

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USA . 37,000 parts In-Stock

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USA . 12,660 parts In-Stock

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Microchip USA

USA . 358 parts In-Stock

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AZTECH Wire

Italy . 622 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

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Corphita

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Continental Prestige Electronics

USA . 980 parts In-Stock

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UHIMA Technologies

Türkiye . 837 parts In-Stock

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Overview

Enhance the power capabilities of your applications with the SBRB1545CTG by Onsemi. Manufactured with precision and expertise, this rectifier diode offers superior performance in a compact package. Ideal for power applications, this Schottky diode features a common cathode configuration and can handle up to 7.5A of output current. With a maximum repetitive peak reverse voltage of 45V, this diode ensures reliable operation even in harsh conditions. Trust Onsemi's reputation for quality and innovation, and experience the value and benefits that the SBRB1545CTG brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient power management and control.

Surface Mount: YES

Surface mount capability makes installation easier and more convenient.

Maximum Reverse Current: 100 uA

Low reverse current ensures minimal power loss and improved efficiency.

Package Shape: RECTANGULAR

Rectangular shape saves space and allows for easy placement in electronic circuits.

No. of Terminals: 2

Simple 2-terminal design simplifies installation and connection.

Package Style (Meter): SMALL OUTLINE

Small outline package style is compact and ideal for space-constrained applications.

Application: POWER

Designed specifically for power applications, ensuring reliable performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature provides versatility for various temperature conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and durability for the terminals.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection.

Case Connection: CATHODE

Cathode case connection ensures proper polarity and functionality.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature protects the diodes from heat damage.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for secure soldering and connection.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC, making it suitable for power applications.

Maximum Forward Voltage (VF): 0.84 V

Low forward voltage minimizes power loss and improves efficiency.

Maximum Output Current: 7.5 A

High output current capability allows for robust power delivery.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low voltage drops, enhancing performance.

Terminal Form: GULL WING

Gull wing terminal form provides secure mounting and connection.

No. of Elements: 2

Having 2 elements allows for more efficient power handling and control.

Maximum Repetitive Peak Reverse Voltage: 45 V

High reverse voltage capability protects the diodes from potential damage.

Maximum Non Repetitive Peak Forward Current: 150 A

High peak forward current capacity ensures reliable performance under heavy loads.

Diode Element Material: SILICON

Silicon material for diode elements offers excellent performance and durability.

Technical Specifications

Diodes & Rectifiers SBRB1545CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

7.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

100 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRB1545CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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