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SBAT54XV2T5G

Onsemi

SBAT54XV2T5G by Onsemi

SBAT54XV2T5G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.8V and output current of 0.2A, ideal for fast recovery applications. It has a reverse test voltage of 25V, low reverse current of 2uA, and quick reverse recovery time of 0.005us. This small outline diode operates b/w -55 to 125°C and is surface mountable for efficient usage in various electronic circuits.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,033 parts In-Stock

1+ parts

$0.220

100+ parts

$0.085

1k+ parts

$0.054

10k+ parts

$0.035

7,033

$0.220

$0.085

$0.054

$0.035

Mouser Electronics

USA . 7,710 parts In-Stock

1+ parts

$0.240

100+ parts

$0.079

1k+ parts

$0.041

10k+ parts

$0.027

7,710

$0.240

$0.079

$0.041

$0.027

Flip Electronics (Authorized)

USA . 247,775 parts In-Stock

1+ parts

-

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247,775

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Future Electronics

Canada . 32,000 parts In-Stock

1+ parts

-

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$0.024

32,000

-

-

-

$0.024

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.101

100+ parts

-

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100

$0.101

-

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IBS Electronics

USA . 23,956 parts In-Stock

1+ parts

$0.197

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-

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23,956

$0.197

-

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Digiode

USA . 2,464 parts In-Stock

1+ parts

$0.285

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2,464

$0.285

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Vyrian

USA . 86,531 parts In-Stock

1+ parts

-

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86,531

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Flip Electronics

USA . 7,775 parts In-Stock

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Sensible Micro Corp

USA . 1,591 parts In-Stock

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1,591

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,639 parts In-Stock

1+ parts

$0.040

100+ parts

-

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4,639

$0.040

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Corohmni

South Africa . 171 parts In-Stock

1+ parts

$0.099

100+ parts

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171

$0.099

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Continental Prestige Electronics

USA . 4,807 parts In-Stock

1+ parts

$0.101

100+ parts

-

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$0.099

4,807

$0.101

-

-

$0.099

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.101

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$0.099

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2,000

$0.101

$0.099

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Argo Parts USA

USA . 825 parts In-Stock

1+ parts

$0.101

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$0.098

825

$0.101

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$0.098

Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.200

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$0.190

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$0.190

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-

200

$0.200

$0.190

$0.190

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Semicontronic

India . 86,550 parts In-Stock

1+ parts

$0.255

100+ parts

$0.249

1k+ parts

$0.247

10k+ parts

-

86,550

$0.255

$0.249

$0.247

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Ampacity Inc.

Singapore . 86,275 parts In-Stock

1+ parts

$0.255

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86,275

$0.255

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Corphita

USA . 649 parts In-Stock

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$0.270

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649

$0.270

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Kulean Microsystems

USA . 7,762 parts In-Stock

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SupplyDigital Components

Austria . 5,858 parts In-Stock

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Problanco Electronics

Mexico . 5,093 parts In-Stock

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TANS Electronics

Latvia . 2,309 parts In-Stock

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UHIMA Technologies

Türkiye . 433 parts In-Stock

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433

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Robosynatics

Brazil . 100 parts In-Stock

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100

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Lucentia Tech

USA . 100 parts In-Stock

1+ parts

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$1.268

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$1.268

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$1.268

100

-

$1.268

$1.268

$1.268

Overview

Experience the superior quality and reliability of Onsemi with the SBAT54XV2T5G diode. Designed for fast recovery applications, this Schottky rectifier diode offers high performance and efficiency. With a maximum reverse current of only 2uA and a fast reverse recovery time of 0.005us, this diode is perfect for demanding electronic circuits. Trust in Onsemi's reputation for excellence and choose the SBAT54XV2T5G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability while keeping the overall weight of the product low.

Maximum Reverse Recovery Time: 0.005 us

Provides fast reverse recovery time for efficient operation.

Minimum Breakdown Voltage: 30 V

Provides a high breakdown voltage for enhanced reliability.

Maximum Operating Temperature: 125 °C

Can operate efficiently at high temperatures.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying AC to DC voltage for various applications.

Technology: SCHOTTKY

Schottky technology minimizes voltage drop and improves efficiency.

Maximum Forward Voltage (VF): 0.8 V

Low forward voltage drop for energy efficiency.

Technical Specifications

Diodes & Rectifiers SBAT54XV2T5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.005 us

Reverse Test Voltage:

25 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBAT54XV2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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