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SBAT54CWT3G

Onsemi

SBAT54CWT3G by Onsemi

SBAT54CWT3G by Onsemi is a fast recovery rectifier diode with common cathode configuration. It features a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V, making it ideal for applications requiring high-speed switching capabilities. With a package style of small outline and Schottky technology, this diode is suitable for use in various electronic devices where efficiency and speed are crucial.

Median Price

$0.088

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 86 parts In-Stock

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$0.088

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Vyrian

USA . 9,986 parts In-Stock

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Digiode

USA . 2,158 parts In-Stock

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2,158

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Distributors (Availability)

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Corohmni

South Africa . 91 parts In-Stock

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$0.085

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91

$0.085

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Aranea Global

USA . 50 parts In-Stock

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$0.086

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$0.083

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50

$0.086

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$0.083

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Ampacity Inc.

Singapore . 947 parts In-Stock

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$1.010

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947

$1.010

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AZTECH Wire

Italy . 413 parts In-Stock

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$12.775

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413

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SupplyDigital Components

Austria . 3,531 parts In-Stock

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Kulean Microsystems

USA . 1,683 parts In-Stock

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Corphita

USA . 1,416 parts In-Stock

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TANS Electronics

Latvia . 838 parts In-Stock

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UHIMA Technologies

Türkiye . 651 parts In-Stock

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Problanco Electronics

Mexico . 104 parts In-Stock

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Overview

Discover the superior quality and reliability of the SBAT54CWT3G diode created by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and durability in their products. This fast recovery diode is perfect for a wide range of applications, providing efficient power management solutions. With a small outline package and common cathode configuration, this diode offers customers exceptional value and benefits. Trust Onsemi to deliver high-quality components that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides great durability and protection for the diodes and rectifiers inside.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy and efficient circuit connections in common cathode configurations.

Surface Mount: YES

Enables easy installation on printed circuit boards, saving space and facilitating automated assembly processes.

Maximum Reverse Recovery Time: 0.005 us

Ensures fast switching speeds for high-frequency applications.

Maximum Reverse Current: 2 uA

Ensures low leakage current for efficient performance and power conservation.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting on PCBs.

Reverse Test Voltage: 25 V

Withstands high reverse voltages, ensuring reliable operation in various circuit conditions.

No. of Terminals: 3

Provides multiple connection points for versatile circuit configurations.

Application: FAST RECOVERY

Designed for applications requiring quick recovery times to prevent power loss and signal distortion.

Maximum Operating Temperature: 125 °C

Suitable for high-temperature environments, ensuring stable performance under varying conditions.

Minimum Operating Temperature: -55 °C

Ideal for use in low-temperature environments, making it versatile for different applications.

Terminal Position: DUAL

Allows for easy and secure connections in dual-terminal setups.

Maximum Power Dissipation: 0.2 W

Can handle moderate power levels without overheating, ensuring long-term reliability.

Minimum Breakdown Voltage: 30 V

Provides a high breakdown voltage, making it suitable for voltage regulation and protection circuits.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow soldering processes during assembly.

Reference Standard: AEC-Q101

Meets automotive industry standards, ensuring quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification of alternating current (AC) to direct current (DC) in various electronic circuits.

Maximum Forward Voltage (VF): 0.8 V

Low forward voltage drop enables efficient and energy-saving operation.

Maximum Output Current: 0.2 A

Capable of handling moderate output currents for various applications.

Technology: SCHOTTKY

Utilizes Schottky barrier technology for fast switching speeds and low forward voltage drops.

Terminal Form: GULL WING

Gull wing terminal design provides secure mechanical and electrical connections.

No. of Elements: 2

Contains two diode elements in one package, offering versatility in circuit designs.

Maximum Repetitive Peak Reverse Voltage: 30 V

Withstands repetitive peak reverse voltages, ensuring reliable performance in cycling applications.

Maximum Non Repetitive Peak Forward Current: 0.6 A

Capable of handling short-duration peak currents without damage, enhancing robustness in dynamic circuit conditions.

Diode Element Material: SILICON

Utilizes silicon material for diode elements, offering reliable and consistent performance in various circuits.

Technical Specifications

Diodes & Rectifiers SBAT54CWT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Minimum Breakdown Voltage:

30 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.005 us

Reverse Test Voltage:

25 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SBAT54CWT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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