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SBAT54ALT3G

Onsemi

SBAT54ALT3G by Onsemi

SBAT54ALT3G by Onsemi is a Schottky rectifier diode with common anode configuration, featuring 0.24V max forward voltage and 0.1A max output current. It is ideal for applications requiring fast switching speeds and low power dissipation, such as automotive electronics due to AEC-Q101 reference standard compliance.

Median Price

$0.164

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 29,302 parts In-Stock

1+ parts

$0.280

100+ parts

$0.108

1k+ parts

$0.068

10k+ parts

$0.044

29,302

$0.280

$0.108

$0.068

$0.044

Mouser Electronics

USA . 17,813 parts In-Stock

1+ parts

$0.280

100+ parts

$0.109

1k+ parts

$0.063

10k+ parts

$0.044

17,813

$0.280

$0.109

$0.063

$0.044

Rochester

USA . 93,343 parts In-Stock

1+ parts

-

100+ parts

$0.047

1k+ parts

$0.039

10k+ parts

$0.035

93,343

-

$0.047

$0.039

$0.035

Verical

USA . 87,608 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

87,608

-

-

-

$0.041

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,452 parts In-Stock

1+ parts

$0.036

100+ parts

-

1k+ parts

-

10k+ parts

-

1,452

$0.036

-

-

-

Vyrian

USA . 2,049 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

2,049

$0.038

-

-

-

IBS Electronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.053

20,000

-

-

-

$0.053

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.073

20,000

-

-

-

$0.073

Sensible Micro Corp

USA . 265 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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265

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 320 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

-

10k+ parts

-

320

$0.034

-

-

-

Corohmni

South Africa . 70 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

70

$0.038

-

-

-

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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20,000

-

-

-

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Kepictronics

USA . 8,000 parts In-Stock

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8,000

-

-

-

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SupplyDigital Components

Austria . 7,029 parts In-Stock

1+ parts

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7,029

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-

-

-

Kulean Microsystems

USA . 6,469 parts In-Stock

1+ parts

-

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6,469

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-

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Problanco Electronics

Mexico . 2,763 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,763

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-

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TANS Electronics

Latvia . 1,593 parts In-Stock

1+ parts

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100+ parts

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1,593

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-

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UHIMA Technologies

Türkiye . 761 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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761

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XScomponents

USA . 456 parts In-Stock

1+ parts

-

100+ parts

$0.140

1k+ parts

-

10k+ parts

-

456

-

$0.140

-

-

Overview

Discover the SBAT54ALT3G by Onsemi, a top-quality diode & rectifier that offers exceptional performance and reliability. Manufactured by Onsemi, a leading name in the industry known for their superior products, this diode features a common anode configuration with two elements, making it versatile for various applications. With a fast reverse recovery time and high operating temperature range, this diode is designed to deliver optimal efficiency and durability. Whether you need it for automotive, industrial, or consumer electronics, the SBAT54ALT3G provides unmatched value and benefits, ensuring seamless operation and long-lasting performance for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various environmental conditions.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.005 us

Ensures fast switching speeds, making the diodes efficient for high-frequency applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for industrial or automotive applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds compared to regular diodes, improving overall efficiency.

Technical Specifications

Diodes & Rectifiers SBAT54ALT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JEDEC-95 Code:

TO-236AA

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SBAT54ALT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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