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SA48ARLG

Onsemi

SA48ARLG by Onsemi

SA48ARLG by Onsemi is a Zener diode with 48V max repetitive peak reverse voltage, 56.1V breakdown voltage, and 500W max non-repetitive peak reverse power dissipation. It is used for transient suppression in applications requiring unidirectional polarity protection at temperatures ranging from -55 °C to 175°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,012 parts In-Stock

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Vyrian

USA . 1,097 parts In-Stock

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SupplyDigital Components

Austria . 8,243 parts In-Stock

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TANS Electronics

Latvia . 7,303 parts In-Stock

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Problanco Electronics

Mexico . 4,267 parts In-Stock

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Kulean Microsystems

USA . 2,657 parts In-Stock

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Corphita

USA . 1,703 parts In-Stock

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UHIMA Technologies

Türkiye . 785 parts In-Stock

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Corohmni

South Africa . 163 parts In-Stock

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Overview

Experience superior protection with the SA48ARLG by Onsemi, a high-quality transient suppression device designed to safeguard your electronics from voltage spikes and surges. Manufactured by Onsemi, a trusted name in the industry, this product offers unrivaled reliability and performance. Ideal for a wide range of applications, this single-config device provides peace of mind knowing your equipment is protected. Trust in the value and benefits that the SA48ARLG delivers, ensuring your devices operate smoothly and efficiently without the worry of damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High power dissipation capability makes this device suitable for handling transient surges and spikes effectively.

Nominal Breakdown Voltage: 56.1 V

The specific breakdown voltage helps in efficiently suppressing voltage surges within the desired range.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows the device to function effectively in various environmental conditions.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides good conductivity and resistance to corrosion, enhancing the overall performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type is specifically designed for transient voltage suppression applications, making it a reliable choice for protecting electronic circuits.

Maximum Clamping Voltage: 77.4 V

High clamping voltage ensures that the protected equipment remains safe even during severe voltage surges.

Technical Specifications

Transient Suppression Devices SA48ARLG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

58.9 V

Minimum Breakdown Voltage:

53.3 V

Nominal Breakdown Voltage:

56.1 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

77.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

48 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SA48ARLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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