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SA48CARL

Onsemi

SA48CARL by Onsemi

SA48CARL by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 48V max repetitive peak reverse voltage. It has bidirectional polarity and 77.4V max clamping voltage, ideal for transient suppression in electronic circuits. With a max power dissipation of 3W and package shape round, it offers efficient protection against voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,568 parts In-Stock

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Vyrian

USA . 464 parts In-Stock

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Kulean Microsystems

USA . 7,428 parts In-Stock

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SupplyDigital Components

Austria . 2,004 parts In-Stock

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Corphita

USA . 1,783 parts In-Stock

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Problanco Electronics

Mexico . 1,560 parts In-Stock

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TANS Electronics

Latvia . 1,367 parts In-Stock

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UHIMA Technologies

Türkiye . 896 parts In-Stock

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Corohmni

South Africa . 214 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the SA48CARL transient suppression device from Onsemi. With a maximum clamping voltage of 77.4V, this Zener diode technology ensures reliable performance in safeguarding against voltage spikes and surges. The single configuration and round package shape make it easy to install in various applications. Trust in Onsemi's reputation for quality and innovation to deliver peace of mind knowing your equipment is well-protected. Upgrade your electronics today with the SA48CARL for unmatched reliability and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package material is durable and provides good protection for the diode, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High power dissipation capability ensures the device can handle sudden spikes in voltage without getting damaged.

Package Shape: ROUND

Round package shape is compact and space-saving, making it easy to integrate into different electronic circuits.

No. of Terminals: 2

Having only 2 terminals simplifies the installation process and reduces the chance of wiring errors.

Terminal Finish: TIN LEAD

Tin lead finish ensures good conductivity and solderability for easy connection in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode efficiently protects electronic components by diverting excess voltage away from the circuit.

Technology: ZENER

Zener technology allows the diode to regulate voltage and provide stable protection against transient surges.

Maximum Repetitive Peak Reverse Voltage: 48 V

With a high repetitive peak reverse voltage, the diode can handle multiple surge events without compromising its performance.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the diode to protect against transient voltage spikes in both directions, offering comprehensive safeguarding for electronic circuits.

Maximum Clamping Voltage: 77.4 V

High clamping voltage ensures that the device limits the voltage surge to a safe level, protecting sensitive components in the circuit.

Technical Specifications

Transient Suppression Devices SA48CARL attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

58.9 V

Minimum Breakdown Voltage:

53.3 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

77.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

48 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SA48CARL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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