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SA48ARL

Onsemi

SA48ARL by Onsemi

SA48ARL by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 48V max repetitive peak reverse voltage. It has a max clamping voltage of 77.4V and 500W non-repetitive peak reverse power dissipation. Ideal for transient suppression in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,273 parts In-Stock

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Digiode

USA . 1,196 parts In-Stock

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Problanco Electronics

Mexico . 7,854 parts In-Stock

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SupplyDigital Components

Austria . 5,093 parts In-Stock

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TANS Electronics

Latvia . 2,115 parts In-Stock

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UHIMA Technologies

Türkiye . 961 parts In-Stock

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Kulean Microsystems

USA . 946 parts In-Stock

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Corphita

USA . 383 parts In-Stock

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Corohmni

South Africa . 123 parts In-Stock

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Overview

Enhance your electronic devices with the SA48ARL transient suppression device by Onsemi. With a reputation for top-quality manufacturing, Onsemi ensures that this product delivers exceptional performance and reliability. Ideal for protecting sensitive components from voltage spikes, the SA48ARL is a must-have for a wide range of applications. Offering peace of mind and safeguarding your equipment, this single-configured device provides valuable protection at an unbeatable value. Trust in Onsemi to deliver cutting-edge technology that exceeds expectations. Elevate your electronics with the SA48ARL today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode inside, ensuring reliable performance and longevity.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

Can handle high levels of power surges, making it suitable for protecting sensitive electronic devices from transient voltage spikes.

Package Shape: ROUND

Allows for easy installation and integration into different types of circuit designs.

Minimum Breakdown Voltage: 53.3 V

Provides effective clamping of voltage spikes above this threshold, safeguarding connected equipment.

Maximum Clamping Voltage: 77.4 V

Limits the voltage across the protected circuit to a safe level, preventing damage to sensitive components.

Technical Specifications

Transient Suppression Devices SA48ARL attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

58.9 V

Minimum Breakdown Voltage:

53.3 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

77.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

48 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SA48ARL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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