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RHRD660S9A-F085

Onsemi

RHRD660S9A-F085 by Onsemi

RHRD660S9A-F085 by Onsemi is a single diode with a max reverse recovery time of 0.035 us and max output current of 6 A. It is designed for hyperfast soft recovery power applications, operating b/w -55 to 175 °C, with a peak reflow temperature of 260 C.

Median Price

$1.080

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 1,214 parts In-Stock

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$1.080

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$0.752

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$0.491

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$1.080

$0.752

$0.491

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RS (Exports)

UK . 110 parts In-Stock

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Nova Conductors

Japan . 1,080 parts In-Stock

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$1.222

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$1.222

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Digiode

USA . 494 parts In-Stock

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Bristol Electronics

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Vyrian

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Ampacity Inc.

Singapore . 2,866 parts In-Stock

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$1.010

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$1.010

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Aranea Global

USA . 2,000 parts In-Stock

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$1.198

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$1.150

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$1.198

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Corohmni

South Africa . 365 parts In-Stock

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$1.198

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$1.198

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Netroflash

USA . 50 parts In-Stock

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$1.222

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AZTECH Wire

Italy . 1,629 parts In-Stock

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$19.105

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 23,520 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,605 parts In-Stock

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SupplyDigital Components

Austria . 6,847 parts In-Stock

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TANS Electronics

Latvia . 3,722 parts In-Stock

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Problanco Electronics

Mexico . 3,617 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,858 parts In-Stock

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Supply Digital

USA . 2,135 parts In-Stock

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Corphita

USA . 729 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 263 parts In-Stock

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Overview

Discover the power of the RHRD660S9A-F085 diode by Onsemi, a game-changer in the world of hyperfast soft recovery power applications. With its high-quality construction and superior performance, this single-configured diode offers customers unrivaled reliability and efficiency. Whether you're looking to enhance the performance of your electronic devices or improve energy efficiency, this diode is the perfect solution. Trust Onsemi's expertise and innovation to deliver a product that exceeds your expectations and unlocks endless possibilities for your projects. Unlock the potential of your designs with the RHRD660S9A-F085 diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.035 us

This fast recovery time ensures efficient and quick response in switching applications.

Maximum Power Dissipation: 50 W

Can handle high power levels, making it suitable for power applications.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments, increasing the versatility of the diode.

Maximum Repetitive Peak Reverse Voltage: 600 V

Can withstand high reverse voltages, making it suitable for high voltage applications.

Technical Specifications

Diodes & Rectifiers RHRD660S9A-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, PD-CASE

Application:

HYPERFAST SOFT RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON NITRIDE

Diode Type:

Maximum Forward Voltage (VF):

2.1 V

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

50 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

RHRD660S9A-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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